Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Oleg Laboutin"'
Autor:
Fan Ren, Alexander Y. Polyakov, Jiancheng Yang, Stephen J. Pearton, Chien-Fong Lo, N. B. Smirnov, Oleg Laboutin, Ivan Shchemerov, Jerry W. Johnson
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:Q1-Q7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a7c4accde3c4defcd5074c6c5cfd00
https://doi.org/10.1149/2.0131802jss
https://doi.org/10.1149/2.0131802jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3048-S3051
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8a5592cca9d87b7218d856e57c920a
https://doi.org/10.1149/2.0121711jss
https://doi.org/10.1149/2.0121711jss
Publikováno v:
Applied Physics Letters. 118:163501
AlGaN/GaN High Electron Mobility Transistors (HEMTs) frequently show an UV-induced increase in channel conductivity (persistent photoconductivity—PPC). PPC is a generic effect that exists for a wide range of HEMT configurations irrespective of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d3bef2baebe849b57e31d8c9b1fa1f3
https://doi.org/10.1063/5.0049797
https://doi.org/10.1063/5.0049797
Autor:
Louis J. Guido, Timothy Ciarkowski, Noah Allen, Roger E. Welser, Kevin T. Chern, Oleg Laboutin
Publikováno v:
Materials Science in Semiconductor Processing. 55:2-6
GaInN/GaN solar cells made without p-type material are demonstrated using an oxidized Ni/Au Schottky barrier design to collect photo-generated carriers. The best devices exhibit a short-circuit current density of 0.065 mA/cm2 with an open-circuit vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2d181dd6d149ff96f6f643ee7a5ba0
https://doi.org/10.1016/j.mssp.2016.03.026
https://doi.org/10.1016/j.mssp.2016.03.026
Autor:
Edward Beam, Paul Saunier, David Kopp, Patrick Fay, Wayne Johnson, Oleg Laboutin, Tomas Palacios, Yu Cao, Michael L. Schuette, Andrew Ketterson, Dong Seup Lee
Publikováno v:
physica status solidi c. 10:827-830
This paper reports depletion-mode In0.13Al0.83Ga0.04N/GaN high electron mobility transistors (HEMTs) on a SiC substrate with a record current gain cutoff frequency (fT) of 317 GHz. Thanks to the combination of high electron mobility, regrown n+ InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35b1cfb7fc78feb691197ec2bc874ce
https://doi.org/10.1002/pssc.201200541
https://doi.org/10.1002/pssc.201200541
Autor:
Yat Li, Christopher Greene, Yu Cao, Fang Qian, J. W. Johnson, Silvija Gradečak, Oleg Laboutin, Sung K. Lim, Yichuan Ling, Megan M. Brewster
Publikováno v:
Nano Letters. 12:3344-3350
We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanowire core and an epitaxially grown (AlN/GaN)(m) (m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dd5c7d8972040680926738a4042211d
https://doi.org/10.1021/nl301690e
https://doi.org/10.1021/nl301690e
Autor:
Oleg Laboutin, Chien-Fong Lo, Fan Ren, Debdeep Jena, Huili Grace Xing, Stephen J. Pearton, Guowang Li, Li Liu, Yu Cao, Wayne Johnson, Ronghua Wang
Publikováno v:
ECS Transactions. 41:301-311
Heterostructure devices based on the AlInN material system have demonstrated unprecedented high frequency performance but are still limited by materials issues. Likewise, improved crystal growth schemes are envisioned as a key component in the realiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fefbc05f2a08c52b3a5645439f857c26
https://doi.org/10.1149/1.3631507
https://doi.org/10.1149/1.3631507
Autor:
Oleg Laboutin, Yu Cao, Stephen J. Pearton, Ivan I. Kravchenko, Tsung-Sheng Kang, Ryan Davies, Fan Ren, Brent P. Gila, Li Liu, Wayne Johnson, Chien-Fong Lo
Publikováno v:
ECS Transactions. 41:63-70
The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce754c3e88108044aaa21be63db6308f
https://doi.org/10.1149/1.3629954
https://doi.org/10.1149/1.3629954
Publikováno v:
Journal of Crystal Growth. 312:3096-3100
The initial stages of metalorganic chemical vapor deposition of InN have been investigated using two different growth procedures: growth of InN over a GaN buffer layer in one continuous run and growth of InN on a pre-deposited GaN template. While the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98ee25719a05763c7ddf17c8eb067d7
https://doi.org/10.1016/j.jcrysgro.2010.07.056
https://doi.org/10.1016/j.jcrysgro.2010.07.056
Autor:
Roger E. Welser, Oleg Laboutin
Publikováno v:
Journal of Crystal Growth. 311:254-257
Thin, uncapped InN deposits on GaN buffer layers are grown and subsequently annealed in a metal organic chemical vapor deposition reactor. Atomic force microscopy imaging of the InN surface reveals a sudden transition from a two- to a three-dimension
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::812c4edab4aa53183c8e0ed9da9f5dbb
https://doi.org/10.1016/j.jcrysgro.2008.11.052
https://doi.org/10.1016/j.jcrysgro.2008.11.052