Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Oleg Golonzka"'
Autor:
Albert Chen, Ilya V. Karpov, Yifu Huang, Oleg Golonzka, Chris Connor, Nathan L. Strutt, Jiahan Zhang, Benjamin Sherrill, Tanmoy Pramanik, Jacob Medeiros, David Janosky, Jack C. Lee, Tony Acosta, Reed Hopkins, Abdullah Guler, Pedro A. Quintero, J. Hicks, Yao-Feng Chang, J. O'Donnell
Publikováno v:
IRPS
For the first time, the impact of temperature instability of resistive memory switching on potential neuromorphic computing applications has been extensively studied using eNVM-R and eNVM-M technologies developed on Intel 22FFL process. The reliabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7562524ea28260c4090ed2f0d3d555c
https://doi.org/10.1109/irps46558.2021.9405120
https://doi.org/10.1109/irps46558.2021.9405120
Autor:
Yao-Feng Chang, Oleg Golonzka, Roza Kotlyar, Nathan L. Strutt, Chris Connor, Albert Chen, J. Hicks, Tony Acosta, J. O'Donnell, Pedro A. Quintero
Publikováno v:
IRPS
For the first time, a comprehensive study of embedded nonvolatile memory (eNVM) resistive random access memory (RRAM) reliability performance and modeling in 22FFL FinFET technology is presented. RRAM retention relaxation is characterized and modeled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b2efb9433e85c2f39818a4c43279e68
https://doi.org/10.1109/irps45951.2020.9128359
https://doi.org/10.1109/irps45951.2020.9128359
Autor:
Umut Arslan, Philip E. Heil, Smith Angeline K, Pedro A. Quintero, Ouellette Daniel G, Juan G. Alzate, Sell Bernhard, Smith Andrew, Fatih Hamzaoglu, M. Seth, Pellegren James, M. Mainuddin, Tahir Ghani, Y. J. Chen, P. Bai, Rownak Jahan, Tanmoy Pramanik, Tofizur Rahman, Liqiong Wei, Justin S. Brockman, Conor P. Puls, P. Hentges, M. Sekhar, Aaron J. Littlejohn, Kevin J. Fischer, Oleg Golonzka, Christopher J. Wiegand, Nilanjan Das
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we discuss array-level MTJ process, performance, and reliability requirements for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled-size MTJ devices capable of meeting L4 Cache specifications across al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adee6532309b9d4a14a290211f8a3a0c
https://doi.org/10.1109/iedm19573.2019.8993474
https://doi.org/10.1109/iedm19573.2019.8993474
Autor:
Fatih Hamzaoglu, C. English, Tahir Ghani, Matthew V. Metz, Joodong Park, Pedro A. Quintero, M. Seth, M. Sekhar, Kevin J. Fischer, Seghete Dragos, Ilya V. Karpov, Christopher J. Jezewski, Yao-Feng Chang, P. Bai, Nilanjan Das, Ouellette Daniel G, J. O'Donnell, A. Pirkle, M. Bohr, Pulkit Jain, Umut Arslan, James S. Clarke, A. Sen Gupta, A. Chaudhari, Albert Chen, Blake C. Lin, O. Baykan, Oleg Golonzka, Christopher J. Wiegand, Chris Connor, Roza Kotlyar, Hui Jae Yoo, Nathan L. Strutt, P. Hentges, H. Kothari
Publikováno v:
2019 Symposium on VLSI Technology.
This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f460d633548bab56bd34decc07e3cc
https://doi.org/10.23919/vlsit.2019.8776570
https://doi.org/10.23919/vlsit.2019.8776570
Autor:
Fatih Hamzaoglu, Justin S. Brockman, Kevin J. Fischer, Tanmoy Pramanik, Oleg Golonzka, J. Hicks, Chris Connor, Juan G. Alzate, J. O'Donnell
Publikováno v:
IRPS
Assessing product-level retention performance of a perpendicular spin-transfer torque magnetic random access memory (STT-MRAM, or MRAM for short) for non-volatile applications requires extrapolation of retention data measured on a relatively small nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a852172700b5d94fb63641819197738a
https://doi.org/10.1109/irps.2019.8720520
https://doi.org/10.1109/irps.2019.8720520
Autor:
Liqiong Wei, Mesut Meterelliyoz, Oleg Golonzka, Pedro A. Quintero, M. Sekhar, Kevin J. Fischer, Ajay Vangapaty, Pulkit Jain, Tanaya Sahu, Blake C. Lin, Chris Connor, P. Hentges, Nathan L. Strutt, Albert Chen, Fatih Hamzaoglu, Umut Arslan, Alzate-Vinasco Juan G
Publikováno v:
ISSCC
A resistive RAM (ReRAM) macro is developed as a low-cost, magnetic-disturb-immune option for embedded, non-volatile memory for SoCs used in IoT and automotive applications. We demonstrate the smallest ReRAM subarray density of 10.1Mb/mm2 in a 22nm lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3307933ad0e97f1ac4f7229ae0558178
https://doi.org/10.1109/isscc.2019.8662393
https://doi.org/10.1109/isscc.2019.8662393
Autor:
Jim OrDonnell, Fatih Hamzaoglu, Tahir Ghani, Kevin J. Fischer, Justin S. Brockman, Oleg Golonzka, Christopher J. Wiegand, Liqiong Wei, Nilanjan Das, Umut Arslan, Pulkit Jain, Blake C. Lin, Juan G. Alzate, Tanaya Sahu, Pedro A. Quintero, Mesut Meterelliyoz, P. Hentges, M. Sekhar, Ajay Vangapaty, Conor P. Puls, Rawshan Jahan
Publikováno v:
ISSCC
STT-MRAM has been emerging as a very-promising high-density embedded non-volatile memory (eNVM) [1], [2]. Embedded Flash memory has been the leading eNVM technology, but STT-MRAM has been developed as a better solution for continuing scaling, speed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15f74d871c0ad943ef0fee492be78b5
https://doi.org/10.1109/isscc.2019.8662444
https://doi.org/10.1109/isscc.2019.8662444
Autor:
Mesut Meterelliyoz, Tahir Ghani, Kevin J. Fischer, O'brien Kevin P, Pellegren James, Dmitri E. Nikonov, J.O Donnell, Chris Connor, Nilanjan Das, P. Nguyen, Smith Andrew, Buford Benjamin, Pedro A. Quintero, P. Hentges, Justin S. Brockman, M. Seth, M. Mainuddin, Philip E. Heil, Smith Angeline K, Brian S. Doyle, Rownak Jahan, Z. Zhang, David L. Kencke, M. Bohr, Liqiong Wei, P. Bai, Tofizur Rahman, M. Lu, Blake C. Lin, M. Sekhar, Conor P. Puls, Kaan Oguz, Joodong Park, A. Selarka, A. Romang, Oleg Golonzka, Christopher J. Wiegand, Juan G. Alzate, Ouellette Daniel G, Umut Arslan, Fatih Hamzaoglu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ba36237ea81a7d30a38bf6d3d89035
https://doi.org/10.1109/iedm.2018.8614620
https://doi.org/10.1109/iedm.2018.8614620
Publikováno v:
The Journal of Chemical Physics. 117:7102-7116
Hyperfine patterns calculations are carried out for the Na3 cluster with a view towards understanding the microwave measurements which were performed for three rotational transitions belonging to the ground X electronic state. The calculations take s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906ea5ba411037a96cc998ad74235c7f
https://doi.org/10.1063/1.1508105
https://doi.org/10.1063/1.1508105
Publikováno v:
Journal of Molecular Spectroscopy. 184:237-249
$^{1}$ W.E. Ernst and S. Rakowsky, Phys. Rev. Lett. 74, 58 (1995). $^{2}$ W.E. Ernst and S. Rakowsky, Ber. Bunsenges. Phys. Chem. 99, 441 (1995). $^{3}$ H.-A. Eckel, J.M. Gress, J. Biele, and W. Demtr\""{o}der, J. Chem, Phys. 98, 135 (1993). $^{4}$ M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6234a4486c76d0eb3f56b525c4a9d714
https://doi.org/10.1006/jmsp.1997.7272
https://doi.org/10.1006/jmsp.1997.7272