Zobrazeno 1 - 10
of 193
pro vyhledávání: '"Oleg E Tereshchenko"'
Autor:
Sebastian Fiedler, Sergey V Eremeev, Vladimir A Golyashov, Andrey K Kaveev, Oleg E Tereshchenko, Konstantin A Kokh, Evgueni V Chulkov, Hendrik Bentmann, Friedrich Reinert
Publikováno v:
New Journal of Physics, Vol 20, Iss 6, p 063035 (2018)
The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum
Externí odkaz:
https://doaj.org/article/aeeefa0a6ff347d187364a1867773d9d
Autor:
Sebastian Fiedler, Lydia El-Kareh, Sergey V Eremeev, Oleg E Tereshchenko, Christoph Seibel, Peter Lutz, Konstantin A Kokh, Evgueni V Chulkov, Tatyana V Kuznetsova, Vladimir I Grebennikov, Hendrik Bentmann, Matthias Bode, Friedrich Reinert
Publikováno v:
New Journal of Physics, Vol 16, Iss 7, p 075013 (2014)
The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic propertie
Externí odkaz:
https://doaj.org/article/9b533b46104d49bda1915758328277d2
Autor:
Gabriel Landolt, Sergey V Eremeev, Oleg E Tereshchenko, Stefan Muff, Bartosz Slomski, Konstantin A Kokh, Masaki Kobayashi, Thorsten Schmitt, Vladimir N Strocov, Jürg Osterwalder, Evgueni V Chulkov, J Hugo Dil
Publikováno v:
New Journal of Physics, Vol 15, Iss 8, p 085022 (2013)
By angle-resolved photoemission spectroscopy (ARPES) we observe a giant Rashba-type spin splitting in the electronic bulk conduction and valence bands of the semiconductor BiTeCl. This material belongs to the group of bismuth tellurohalides BiTeX (X
Externí odkaz:
https://doaj.org/article/2a44a6f4e3674f6c90241dba4890a198
Autor:
Niranjan Kumar, Roman S. Pleshkov, B. S. Prathibha, Vladimir N. Polkovnikov, Nikolay I. Chkhalo, Vladimir A. Golyashov, Oleg E. Tereshchenko
Publikováno v:
Physical Chemistry Chemical Physics. 25:1205-1213
The quantification of surface and subsurface oxidation of Be/Al periodic multilayer mirrors due to exposure in the ambient atmosphere was investigated by depth-resolved X-ray photoelectron spectroscopy. The contribution of oxidation was lower for the
Autor:
Natalia P. Stepina, Denis V. Ishchenko, Vladimir A. Golyashov, Alexander O. Bazhenov, Ekaterina S. Goldyreva, Igor O. Akhundov, Andrey S. Tarasov, Konstantin A. Kokh, Oleg E. Tereshchenko
Publikováno v:
Crystal Growth & Design. 22:7255-7263
Autor:
Irina V. Antonova, Konstantin A. Kokh, Nadezhda A. Nebogatikova, Evgenii A. Suprun, Vladimir A. Golyashov, Oleg E. Tereshchenko
Publikováno v:
Crystal Growth & Design. 22:5335-5344
Autor:
Hiroaki Tanaka, Andrei V. Telegin, Yurii P. Sukhorukov, Vladimir A. Golyashov, Oleg E. Tereshchenko, Alexander N. Lavrov, Takuya Matsuda, Ryusuke Matsunaga, Ryosuke Akashi, Mikk Lippmaa, Yosuke Arai, Shinichiro Ideta, Kiyohisa Tanaka, Takeshi Kondo, Kenta Kuroda
Publikováno v:
Physical Review Letters. 130
Autor:
Paolo Sessi, Rudro R. Biswas, Thomas Bathon, Oliver Storz, Stefan Wilfert, Alessandro Barla, Konstantin A. Kokh, Oleg E. Tereshchenko, Kai Fauth, Matthias Bode, Alexander V. Balatsky
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Magnetic impurities break time reversal symmetry in topological insulators, but there has been disagreement between theory and experiment. Here, the authors study the response of topological states to magnetic dopants at the atomic level and show tha
Externí odkaz:
https://doaj.org/article/91d0dc9b12f24e3585fbe16a97d36a82
Autor:
Henriette Maaß, Hendrik Bentmann, Christoph Seibel, Christian Tusche, Sergey V. Eremeev, Thiago R. F. Peixoto, Oleg E. Tereshchenko, Konstantin A. Kokh, Evgueni V. Chulkov, Jürgen Kirschner, Friedrich Reinert
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
In semiconductors containing heavy elements, the Rashba spin-orbit interaction can couple the momentum and spin of electrons, yielding spintronic functionality. Here, the authors image band- and orbital-dependent spin-textures in the layered polar se
Externí odkaz:
https://doaj.org/article/60d1b5d302fe4962b62ce75962f34c69
Autor:
Oleg E. Tereshchenko, Vladimir A. Golyashov, Vadim S. Rusetsky, Danil A. Kustov, Andrey V. Mironov, Alexander Yu. Demin
Publikováno v:
Nanomaterials; Volume 13; Issue 3; Pages: 422
Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which tradition