Dynamics of electric-field domains and chaos in semiconductor superlattices

Autor: Manuel Kindelan, Luis L. Bonilla, Jorge E. Galán, Oleg Bulashenko, Miguel Moscoso

Publikováno v: Solid-State Electronics. 40:161-165

A discrete drift model of sequential resonant tunneling in weakly-coupled doped or undoped GaAs AlAs superlattices (SL) under d.c. or d.c. + a.c. voltage bias and laser illumination is analyzed. In agreement with experiments our model shows an oscill

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5dc8355c014fbcac702a51516610b536
https://doi.org/10.1016/0038-1101(95)00238-3

Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach

Autor: J. C. Vaissiere, P. Gaubert, J. P. Nougier, Oleg Bulashenko, Luca Varani

Publikováno v: Dipòsit Digital de la UB
Universidad de Barcelona
Scopus-Elsevier
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2000, 88 (8), pp.4709. ⟨10.1063/1.1309120⟩
Recercat. Dipósit de la Recerca de Catalunya
instname

A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-car

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e24ceb2e21b9705b822ee3135e5bfca
http://hdl.handle.net/2445/22099

Monte Carlo Analysis of High-Field Transport under Classical Size-Effect Conditions

Autor: Lino Reggiani, Oleg Bulashenko, Pascal Piva, Luca Varani

Publikováno v: 8th International Conference on Hot Carriers in Semiconductors
8th International Conference on Hot Carriers in Semiconductors, K. Hess, J. P. Leburton and U. Ravaioli, 1996, Chicago, United States. pp.401, ⟨10.1007/978-1-4613-0401-2⟩
Hot Carriers in Semiconductors ISBN: 9781461380351

When reducing the dimensions of a device, carrier transport goes from diffusive to ballistic regime and both current-voltage characteristics and Johnson-Nyquist noise caused by carrier scattering processes acquire new features. In diffusive regime th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06d896dbd6d9ea2cd4bb0827f362407b
https://hal.archives-ouvertes.fr/hal-02436050

Size effect on current fluctuations in thin metal films: Monte Carlo approach

Autor: V. A. Kochelap, O. V. Kochelap, Oleg Bulashenko

Publikováno v: Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname

Current fluctuations associated with the classical size effect, for which the mean free path of the carriers \ensuremath{\lambda} is comparable to, or greater than, the film thickness d, have been investigated. The Monte Carlo approach has been exten

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac7d2e6b74e10ca6a0b436185bfb44f8
http://hdl.handle.net/2445/10915

Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

Autor: Daniel Pardo, Luca Reggiani, Oleg Bulashenko, Tomas Gonzalez, Javier Mateos

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Scopus-Elsevier
Dipòsit Digital de la UB
Universidad de Barcelona

We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37f3e1de5bc0b8e34ebd34005b60132f
http://hdl.handle.net/2445/10911