Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Olalekan Afuye"'
Autor:
Olalekan Afuye, Xiang Li, Felicia Guo, Debdeep Jena, Daniel C. Ralph, Alyosha Molnar, Huili Grace Xing, Alyssa Apsel
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 2, Pp 197-205 (2019)
This article introduces a circuits model for a proposed spin-based device called a spin-orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnetic
Externí odkaz:
https://doaj.org/article/934b0ab922534de6b58c431afd366a0b
Autor:
Khalid Al-Hawaj, Tuan Ta, Nick Cebry, Shady Agwa, Olalekan Afuye, Eric Hall, Courtney Golden, Alyssa B. Apsel, Christopher Batten
Publikováno v:
2023 IEEE International Symposium on High-Performance Computer Architecture (HPCA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::286e8058c8080f815b2ac70a629f04ca
https://doi.org/10.1109/hpca56546.2023.10071074
https://doi.org/10.1109/hpca56546.2023.10071074
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a275ccca9a4953bf449d7349fd42f435
https://doi.org/10.1109/iscas48785.2022.9937228
https://doi.org/10.1109/iscas48785.2022.9937228
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb3c38e8c5e8ab9e9800184e659c0bd
https://doi.org/10.1109/essderc53440.2021.9631814
https://doi.org/10.1109/essderc53440.2021.9631814
Autor:
Daniel C. Ralph, Felicia Guo, Alyssa B. Apsel, Huili Grace Xing, Debdeep Jena, Olalekan Afuye, Alyosha Molnar, Xiang Li
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 5:197-205
This article introduces a circuits model for a proposed spin-based device called a spin–orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be6285ff5c34e20203f8f2dd9989539c
https://doi.org/10.1109/jxcdc.2019.2952394
https://doi.org/10.1109/jxcdc.2019.2952394
Towards a Reconfigurable Bit-Serial/Bit-Parallel Vector Accelerator using In-Situ Processing-In-SRAM
Publikováno v:
ISCAS
Vector accelerators can efficiently execute regular data-parallel workloads, but they require expensive multi-ported register files to feed large vector ALUs. Recent work on in-situ processing-in-SRAM shows promise in enabling area-efficient vector a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68211c84c72f0278de28dc605bf28ab1
https://doi.org/10.1109/iscas45731.2020.9181068
https://doi.org/10.1109/iscas45731.2020.9181068