Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Olaf Zschieschang"'
Autor:
Yafan Zhang, Gerald Weis, Mietek Bakowski, Hans-Peter Nee, Klaus Neumaier, Gerhard Schmid, Olaf Zschieschang
Publikováno v:
2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Silicon carbide embedded power modules enable a compact and cost competitive packaging solution for high-switching frequency and high-temperature operation applications. Power module packaging technologies span several engineering domains. At the ear
Thermal Simulations and Experimental Verification of Power Modules Designed for Double Sided Cooling
Autor:
Olaf Zschieschang, Dag Andersson, Jonas Ottosson, Alexander Otto, Alexander Mann, Sophia Frankeser, Klas Brinkfeldt
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
Cooling power modules on both sides of the active switching devices reduces the operational junction temperature compared to conventional single sided cooling. In this work, thermal simulations of power modules based on single sided cooling concepts
Autor:
Jonas Ottosson, Stefan Nord, Dag Andersson, Hauke Baumgartel, Sophia Frankeser, Eberhard Kaulfersch, Florian Hilpert, Klas Brinkfeldt, Matthias Brusius, Gorazd Gotovac, Gorazd Lampic, Olaf Zschieschang, Alexander Otto
Publikováno v:
2016 Pan Pacific Microelectronics Symposium (Pan Pacific).
COSIVU is a three year collaborative research project that ended in September 2015 and which has been funded within the European Green Car Initiative (now the European Green Vehicle Initiative). COSIVU addresses one of the most critical technical par
Autor:
Eberhard Kaulfersch, Michael Edwards, Olaf Zschieschang, Klaus Neumaier, Jonas Ottosson, Klas Brinkfeldt, Dag Andersson, Alexander Otto
Publikováno v:
Advanced Microsystems for Automotive Applications 2015 ISBN: 9783319208541
The electrification of drive trains combined with special requirements of the automotive and heavy construction equipment applications drives the development of small, highly integrated and reliable power inverters. To minimize the volume and increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba008b3529f4e905f8e7fab7e105d25
https://doi.org/10.1007/978-3-319-20855-8_13
https://doi.org/10.1007/978-3-319-20855-8_13
Autor:
Eberhard Kaulfersch, Michael Edwards, Jonas Ottosson, Klaus Neumaier, Olaf Zschieschang, Dag Andersson, Alexander Otto, Klas Brinkfeldt
Publikováno v:
2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devi
Autor:
Michael Edwards, Klas Brinkfeldt, Dag Andersson, Thorbjörn Åklint, Olaf Zschieschang, Klaus Neumaier
Publikováno v:
2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
In power electronics, more efficient removal of heat from the junction of power devices leads to a higher power rating per die, which in turn leads to fewer die and reduced system volume. Since temperature is a main driver in expected failure modes a
Autor:
Alexander Mann, Olaf Zschieschang, Eberhard Kaulfersch, Dag Andersson, Klaus Neumaier, Michael Edwards, Klas Brinkfeldt, Alexander Otto
Publikováno v:
2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved curre
Autor:
Eberhard Kaulfersch, Olaf Zschieschang, Dag Andersson, Klas Brinkfeldt, Klaus Neumaier, Sven Rzepka, Alexander Otto
Publikováno v:
Advanced Microsystems for Automotive Applications 2014 ISBN: 9783319080864
Wide-bandgap semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in electric vehicles due to their improved electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dfb675cc80524f26120790b91fa1191
https://doi.org/10.1007/978-3-319-08087-1_21
https://doi.org/10.1007/978-3-319-08087-1_21