Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Olaf Rockenfeller"'
Autor:
Michael Heuken, Markus Luenenbuerger, Maarten Leys, Adam R. Boyd, Stefan Degroote, Johannes Kaeppeler, Olaf Rockenfeller, Frank Schulte, Marianne Germain
Publikováno v:
physica status solidi c. 6
An AlGaN based high electron mobility transistor (HEMT) structure was grown on 200 mm diameter (111) silicon by metal organic chemical vapour deposition (MOCVD). The growth was initiated by an AlN layer directly on Si. A level wafer temperature profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e5afbe3776d40bcc25e125015b16bd
https://doi.org/10.1002/pssc.200880925
https://doi.org/10.1002/pssc.200880925
