Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Okkes Gokalp Sokmen"'
Autor:
Okkes Gokalp Sokmen, Mustafa Alçi
Publikováno v:
2018 5th International Conference on Electrical and Electronic Engineering (ICEEE).
In this study, a novel active signal processing block called Fully Differential Voltage Differencing Current Controlled Current Conveyor (FD-VDCCC) is proposed. The input and the output stages of FD-VDCCC consist of a fully differential operational t
Publikováno v:
Elektronika ir Elektrotechnika. 22
In this study, a low-voltage low-power design of previously introduced analog signal processing element called as Voltage Differencing Inverting Buffered Amplifier (VDIBA) is presented. Level shifter current mirrors are used in the circuit design in
Publikováno v:
Volume: 24, Issue: 4 2401-2411
Turkish Journal of Electrical Engineering and Computer Science
Turkish Journal of Electrical Engineering and Computer Science
A novel floating gate MOS (FGMOS) transistor-based differential difference controlled current conveyor (DDCCC) is proposed in this paper. Major advantages of the FGMOS-based DDCCC are low power dissipation and simplicity. The proposed circuit is desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d051f0563bf65247d408ea41339a79b
https://avesis.erciyes.edu.tr/publication/details/5a274a9a-e5ec-47ab-bc3c-71762598b4fc/oai
https://avesis.erciyes.edu.tr/publication/details/5a274a9a-e5ec-47ab-bc3c-71762598b4fc/oai
Publikováno v:
Elektronika ir Elektrotechnika. 21
In this paper, a low voltage low power operational transconductance amplifier (OTA) structure is proposed. To achieve the low voltage low power operation, level shifter current mirrors are employed in the circuit structure. The proposed structure ope
Autor:
Mustafa Alçi, Okkes Gokalp Sokmen
Publikováno v:
SIU
In this paper, a novel floating gate MOS (FGMOS) based current controlled differential voltage current conveyor (CCDVCC) structure is proposed. Major advantages of the proposed structure are circuit simplicity and low power dissipation. Only 6 MOS an