Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Okhyun Nam"'
Autor:
Mi-Hyang Sheen, Yong-Hee Lee, Jongjin Jang, Jongwoo Baek, Okhyun Nam, Cheol-Woong Yang, Young-Woon Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 1946 (2023)
Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to 112¯2 and 011¯1, were formed in the embedded multi-quantum wells (MQWs). The structural
Externí odkaz:
https://doaj.org/article/c1d854c787e748369b89cc684a08ab43
Autor:
Byeongchan So, Junchae Lee, Changheon Cheon, Joohyung Lee, Uiho Choi, Minho Kim, Jindong Song, Joonyeon Chang, Okhyun Nam
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045036-045036-7 (2021)
Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this
Externí odkaz:
https://doaj.org/article/6d01311f229e48e1a7aec9785b6bbfe7
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075104-075104-5 (2019)
Large area deep ultraviolet (DUV) light is generated by carbon nanotube (CNT) cold cathode electron beam (C-beam) irradiation on Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum wells (MQWs) anode. We developed areal electron beam (EB) with CNT cold cathode
Externí odkaz:
https://doaj.org/article/988fc7c2ff6644309696c736ad9b4c40
Publikováno v:
AIP Advances, Vol 6, Iss 4, Pp 045209-045209-8 (2016)
In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were
Externí odkaz:
https://doaj.org/article/77779cf90bfe47baa51fdaf5834c7359
Autor:
Kyoung-Ho Kim, Minh-Tan Ha, Heesoo Lee, Minho Kim, Okhyun Nam, Yun-Ji Shin, Seong-Min Jeong, Si-Young Bae
Publikováno v:
Materials; Volume 15; Issue 3; Pages: 1050
Materials, Vol 15, Iss 1050, p 1050 (2022)
Materials, Vol 15, Iss 1050, p 1050 (2022)
This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5489a6b6a93f9331865ae68c4bf987dd
Autor:
Uiho Choi, Sung Tae Yoo, Minho Kim, Byeongchan So, Changheon Cheon, Mino Yang, Moonsang Lee, Kyu Chang Park, Okhyun Nam
Publikováno v:
Applied Physics Letters. 122:091104
Far-ultraviolet-C (UVC) light is an efficient and safe germicide because the wavelength band eradicates viruses but is harmless to human cells. In this study, electron-beam-pumped AlGaN emitters have been introduced as an alternative to far-UVC light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4549a6f7d7fb10f890f640802f73e3a8
https://doi.org/10.1063/5.0122697
https://doi.org/10.1063/5.0122697
Publikováno v:
physica status solidi (a). 220:2200680
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff35d9bcb9945f1d7f523ba76c6a2232
https://doi.org/10.1002/pssa.202200680
https://doi.org/10.1002/pssa.202200680
Publikováno v:
Thin Solid Films. 680:31-36
In this study, we investigated the effect of well and barrier thicknesses on the optical, structural and electrical properties of multi quantum wells structures and deep-ultraviolet light emitting diodes (DUV-LEDs) through simulation and experiments.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce564e4c1959513f394d596fe120a565
https://doi.org/10.1016/j.tsf.2019.04.031
https://doi.org/10.1016/j.tsf.2019.04.031
Autor:
Uiho Choi, Jaeyeon Han, Byeongchan So, Kyeongjae Lee, Okhyun Nam, Taemyung Kwak, Taehoon Jang, Yongjun Nam
Publikováno v:
Thin Solid Films. 675:148-152
In this study, the effect of NH3 pre-treatment is investigated to obtain high-quality nitrogen-polar GaN grown on a SiC substrate. The GaN/AlN/C-face 4° off-cut SiC structure is successfully grown with pre-treatment temperatures of 1250, 1300, and 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e3871e5e0eb299290e2c104cb49f52
https://doi.org/10.1016/j.tsf.2019.01.049
https://doi.org/10.1016/j.tsf.2019.01.049
Publikováno v:
Thin Solid Films. 752:139261
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6feef2ffc9415d7b05103733e924198
https://doi.org/10.1016/j.tsf.2022.139261
https://doi.org/10.1016/j.tsf.2022.139261