Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Okada, Syunji"'
Autor:
Itoh Noriaki, Shimizu-Iwayama Tsutomu, Hioki Tatsumi, Fujita Tetsuo, Okada Syunji, Fukui Minoru
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 91:418-421
Aanomalous features of the defects in Si implanted amorphous SiO2 are reported. The numbers of E'1 centers and B2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd527433a1f69b67c0cd533521ac2472
https://doi.org/10.1016/0168-583x(94)96260-x
https://doi.org/10.1016/0168-583x(94)96260-x
Publikováno v:
Electronics & Communications in Japan (0424-8368); 1984, Vol. 67 Issue 7, p28-37, 10p
Publikováno v:
Japanese Journal of Applied Physics; October 1990, Vol. 29 Issue: 10 pL1846-L1846, 1p