Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Ojo, Solomon"'
Autor:
Zhou, Jie, Vincent, Daniel, Acharya, Sudip, Ojo, Solomon, Abrand, Alireza, Liu, Yang, Gong, Jiarui, Liu, Dong, Haessly, Samuel, Shen, Jianping, Xu, Shining, Li, Yiran, Lu, Yi, Stanchu, Hryhorii, Mawst, Luke, Claflin, Bruce, Mohseni, Parsian K., Ma, Zhenqiang, Yu, Shui-Qing
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventiona
Externí odkaz:
http://arxiv.org/abs/2409.09752
Autor:
Acharya, Sudip, Stanchu, Hryhorii, Kumar, Rajesh, Ojo, Solomon, Benamara, Mourad, Chang, Guo-En, Li, Baohua, Du, Wei, Yu, Shui-Qing
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under pulsed cond
Externí odkaz:
http://arxiv.org/abs/2405.10163
Monolayers of ReS2 were grown by a chemical vapor deposition technique on SiO2/Si substrates and investigated at room temperature by using micro-Raman, micro-photoluminescence (PL) and absorbance spectroscopies. The Raman scattering spectrum exhibits
Externí odkaz:
http://arxiv.org/abs/2404.13241
Autor:
Abernathy, Grey, Zhou, Yiyin, Ojo, Solomon, Alharthi, Bader, Grant, Perry C., Du, Wei, Margetis, Joe, Tolle, John, Kuchuk, Andrian, Li, Baohua, Yu, Shui-Qing
The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated aiming to impro
Externí odkaz:
http://arxiv.org/abs/2009.12254
Autor:
Zhou, Yiyin, Ojo, Solomon, Miao, Yuanhao, Tran, Huong, Grant, Joshua M., Abernathy, Grey, Amoah, Sylvester, Bass, Jake, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun onl
Externí odkaz:
http://arxiv.org/abs/2009.12229
Autor:
Zhou, Yiyin, Miao, Yuanhao, Ojo, Solomon, Tran, Huong, Abernathy, Grey, Grant, Joshua M., Amoah, Sylvester, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electr
Externí odkaz:
http://arxiv.org/abs/2004.09402
Autor:
OJO, Solomon1 solomon.ojo@uniosun.edu.ng, ODUSE, Pelumi Adebayo2
Publikováno v:
Annals of the Constantin Brancusi University of Targu Jiu-Letters & Social Sciences Series. 2024, Issue 1, p156-179. 24p.
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Autor:
Ojo, Solomon, Stanchu, Hryhorii, Acharya, Sudip, Said, Abdulla, Amoah, Sylvester, Benamara, Mourad, Li, Chen, de Oliveira, Fernando M., Mazur, Yuriy I., Yu, Shui-Qing, Salamo, Gregory
Publikováno v:
In Journal of Crystal Growth 1 March 2023 605
Autor:
Abernathy, Grey1,2 (AUTHOR), Ojo, Solomon1,2 (AUTHOR), Said, Abdulla1,2 (AUTHOR), Grant, Joshua M.1 (AUTHOR), Zhou, Yiyin1,2 (AUTHOR), Stanchu, Hryhorii3 (AUTHOR), Du, Wei1,3 (AUTHOR), Li, Baohua4 (AUTHOR), Yu, Shui-Qing1,3 (AUTHOR) syu@uark.edu
Publikováno v:
Scientific Reports. 10/28/2023, Vol. 13 Issue 1, p1-7. 7p.