Zobrazeno 1 - 10
of 20 741
pro vyhledávání: '"Ohmic contact"'
Publikováno v:
East European Journal of Physics, Iss 3, Pp 328-332 (2024)
4-probe measurements of surface resistivity, measurements of dark and light current-voltage characteristics, the possibilities of using a thin PdSi film to obtain perfect nano-sized ohmic contacts on the Si(111) surface have been investigated using A
Externí odkaz:
https://doaj.org/article/d91521fb2c6442a898831a326b0742a4
Publikováno v:
SmartMat, Vol 5, Iss 4, Pp n/a-n/a (2024)
Abstract Two‐dimensional (2D) materials with free of dangling bonds have the potential to serve as ideal channel materials for the next generation of field‐effect transistors (FETs) due to their atomic‐thin and excellent electronic properties.
Externí odkaz:
https://doaj.org/article/cc436448916e4be190f8f02bb869d373
Autor:
Shanshan Yang, Meixin Feng, Yuzhen Liu, Wenjun Xiong, Biao Deng, Yingnan Huang, Chuanjie Li, Qiming Xu, Yanwei Shen, Qian Sun, Hui Yang
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-5 (2024)
High-Al-content n-AlGaN ohmic contact is very important for deep ultraviolet optoelectrical devices. However, it often suffers from the etching damages formed in inductively coupled plasma (ICP) etching. In this paper, the effects of ICP etching para
Externí odkaz:
https://doaj.org/article/49b164dd3b164480b12360c4e1aa190a
Publikováno v:
Circuit World, 2022, Vol. 49, Issue 4, pp. 424-430.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/CW-08-2020-0193
Publikováno v:
Sensors, Vol 24, Iss 17, p 5540 (2024)
A MEMS piezoresistive sensor for measuring accelerations greater than 100,000 g (about 106 m/s2) is described in this work. To enhance the performance of the sensor, specifically widening its measurement range and natural frequency, a cross-beam cons
Externí odkaz:
https://doaj.org/article/6edaaabcb49b4ed1a0fddb5a6fc66504
Autor:
Chen Wu, Xudong Fang, Qiang Kang, Ziyan Fang, Hao Sun, Dong Zhang, Libo Zhao, Bian Tian, Ryutaro Maeda, Zhuangde Jiang
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 2428-2441 (2023)
SiC, as a representative of the third generation semiconductors, is widely investigated in power devices and sensors. However, ohmic contacts, an important component for signal output of various SiC chips, have always faced challenges with unclear fo
Externí odkaz:
https://doaj.org/article/9c34123dcdf64bd587e3c0c5cbbbae2f
Autor:
A. D. Yunik, J. A. Solovjov
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 8, Pp 14-20 (2023)
Effect of rapid thermal annealing conditions on the specific resistance of the ohmic contacts of Ti/Al/Ni/Au metallization with layer thicknesses of 20/120/40/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire su
Externí odkaz:
https://doaj.org/article/44d0a5572d064a3aad7af5625fd28834
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 386 (2024)
Contact scaling is a major challenge in nano complementary metal–oxide–semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanom
Externí odkaz:
https://doaj.org/article/08aa64a40a48407dbe42869896c3e127
Autor:
Xinkun Zhang, Haoran Qie, Yu Zhou, Yaozong Zhong, Jianxun Liu, Quan Dai, Qian Li, Xiaoning Zhan, Xiaolu Guo, Xin Chen, Qian Sun, Hui Yang
Publikováno v:
Applied Physics Express, Vol 17, Iss 9, p 096501 (2024)
The degradation of an n ^++ GaN regrown ohmic contact in a MIS-HEMT device induced by ion beam etching (IBE) damages and relevant mechanisms have been studied. Abnormal I–V behaviors of the etched n ^++ GaN were observed by the transfer length meth
Externí odkaz:
https://doaj.org/article/b33ac63382fd49e9b8b87a3deb3ff8ad
Autor:
Feihu Zou, Yao Cong, Weiqi Song, Haosong Liu, Yanan Li, Yifan Zhu, Yue Zhao, Yuanyuan Pan, Qiang Li
Publikováno v:
Nanomaterials, Vol 14, Iss 3, p 238 (2024)
The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiA
Externí odkaz:
https://doaj.org/article/78938835c0464704a976a160fe192ac5