III-V material growth on electrochemically porosified Ge substrates

Autor: Winter, E., Schreiber, W., Schygulla, P., Souza, P.L., Janz, S., Lackner, D., Ohlmann, J.

Publikováno v: In Journal of Crystal Growth 15 January 2023 602

Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates

Autor: France, R.M., Feifel, M., Belz, J., Beyer, A., Volz, K., Ohlmann, J., Lackner, D., Dimroth, F.

Publikováno v: In Journal of Crystal Growth 15 January 2019 506:61-70

Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates

Autor: Predan, F., Ohlmann, J., Mrabet, S., Dimroth, F., Lackner, D.

Publikováno v: In Journal of Crystal Growth August-September 2018 496-497:36-42

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Thin-film Solar Cells with MgF2/Ag back mirror patterning for improved near-IR reflectance

Autor: Reboucas, L., Bauhuis, G.J., Ohlmann, J., Maasen, J., Vlieg, E., Schermer, J.J.

Publikováno v: PVCS 2022: 2022 IEEE 49th Photovoltaics Specialists Conference, 5-10 June 2022, Philadelphia, PA, USA, pp. 1280-1282
PVCS 2022: 2022 IEEE 49th Photovoltaics Specialists Conference, 5-10 June 2022, Philadelphia, PA, USA, 1280-1282. Piscataway : IEEE
STARTPAGE=1280;ENDPAGE=1282;TITLE=PVCS 2022: 2022 IEEE 49th Photovoltaics Specialists Conference, 5-10 June 2022, Philadelphia, PA, USA

8th World Conference on Photovoltaic Energy Conversion; 396-398
Combining epitaxial lift-off with a dielectric-metal back mirror can boosts III-V solar cells efficiencies by enhanced photon recycling without sacrificing the costly growth wafer.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d97388e4eca2b87bd13898e3ad142b2d
https://repository.ubn.ru.nl/handle/2066/284724