Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Oh, Chong Khiam"'
Identification of Defective Fin by E-beam Induced Current in Advanced FinFET Device Failure Analysis
Publikováno v:
International Symposium for Testing and Failure Analysis.
E-beam induced current technique is a fault isolation technique based on SEM-based nanoprobers. Electron beam induced current (EBIC) can help failure analysts quickly identify the defective device with abnormal junction behavior from a relatively lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291ca65194763d1cf88a42c54ec4b6cc
https://doi.org/10.31399/asm.cp.istfa2018p0349
https://doi.org/10.31399/asm.cp.istfa2018p0349
Publikováno v:
International Symposium for Testing and Failure Analysis.
Soft failures are among the most challenging yield detractors. They typically show test parameter sensitive characteristics, which would pass under certain test conditions but fail under other conditions. Conductive-atomic force microscopy (CAFM) eme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2d5c9c007b533dd10e17d30f118766
https://doi.org/10.31399/asm.cp.istfa2017p0327
https://doi.org/10.31399/asm.cp.istfa2017p0327
Publikováno v:
In Microelectronics Reliability August-October 2000 40(8-10):1455-1459
Publikováno v:
International Symposium for Testing and Failure Analysis.
The increase in complexity of process, structure, and design not only increases the amount of failure analysis (FA) work significantly, but also leads to more complicated failure modes. To meet the need of high success rate and fast throughput FA ope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::764ba003c9cb53454aa12d2652c868bc
https://doi.org/10.31399/asm.cp.istfa2016p0458
https://doi.org/10.31399/asm.cp.istfa2016p0458
Autor:
Chuan Zhang, Atul Chittora, Ma Yinzhe, Sekar Kannan, Yan Pan, Jeffrey Lam, Oh Chong Khiam, Goh Szu Huat, Nyi Ohnmar, Lim Seng Keat, Don Nedeau
Publikováno v:
International Symposium for Testing and Failure Analysis.
With a focus on open failure candidates, an extra effort in defining the ease of physical failure analysis (PFA) processing is taken in this paper by closely modeling the PFA processing flow and detailed estimation of the processing cost involved in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59616626ef39f46c06f7696ee5139864
https://doi.org/10.31399/asm.cp.istfa2013p0040
https://doi.org/10.31399/asm.cp.istfa2013p0040
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
TrenchMOS FET devices fabricated vertically instead of conventional horizontal POWERMOS devices. Conventional failure analysis techniques have shown difficulty in identifying the failing location if the defect happens at the bottom of trench. Differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fd365ebd8e1aa5fc88714e1c1d22230
https://doi.org/10.1109/ipfa.2013.6599152
https://doi.org/10.1109/ipfa.2013.6599152
Publikováno v:
2006 IEEE International Conference on Semiconductor Electronics.
In this paper, an attempt is made to highlight a new SEM based technique that was used to detect pinholes in the as- deposited/as-grown dielectrics. The fundamental principle governing the technique is discussed. This technique is benchmarked against
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42a6ac425b0b9ff6bcea19e3c118257
https://doi.org/10.1109/smelec.2006.380729
https://doi.org/10.1109/smelec.2006.380729
Publikováno v:
2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Increased packing density and reduced device size leads to increase in the back-end related delays. This happens as a result of increase in the metal resistance due to decreased line-width and increased capacitance due to a higher density of the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9342abaa4bb41aa7bd602ad617cd47
https://doi.org/10.1109/ipfa.2006.251026
https://doi.org/10.1109/ipfa.2006.251026
Publikováno v:
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Scan/ATPG failures have been one of the main failures contributing to low yield issues and problems in Microelectronics. In this paper, the beauty of the TetraMax Diagnosis together with the Laker Diagnosis Software which serve as a complement was di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e96df0a069f1d38cec116cd32bfacb
https://doi.org/10.1109/ipfa.2006.251034
https://doi.org/10.1109/ipfa.2006.251034
Publikováno v:
Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..
In this paper an attempt is made to understand and explain the fundamental challenges involved in integrating copper as interconnect scheme with the dual damascene approach. Most basic electrical failure mode like the power shorts is discussed and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9bc0924a7396064cea7341baac6d3f7
https://doi.org/10.1109/ipfa.2005.1469177
https://doi.org/10.1109/ipfa.2005.1469177