Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Ogyun Seok"'
Autor:
Sung-Uk Zhang, Ogyun Seok
Publikováno v:
Energy Reports, Vol 9, Iss , Pp 65-77 (2023)
Wide band gap semiconductors are attractive in the electric vehicle industry because of their higher operating temperatures, and lower switching losses than those of silicon semiconductors. However, the electric vehicle industry has driven the develo
Externí odkaz:
https://doaj.org/article/7402e7a574e6488ea231c649ff2440dd
Autor:
Chaeyun Kim, Hyowon Yoon, Yeongeun Park, Sangyeob Kim, Gyuhyeok Kang, Dong-Seok Kim, Ogyun Seok
Publikováno v:
Micromachines, Vol 15, Iss 4, p 496 (2024)
We investigated the effects of gate bias regarding the degradation of electrical characteristics during gamma irradiation. Moreover, we observed the punch through failure of 1.2 kV rated commercial Silicon Carbide (SiC) Metal Oxide Semiconductor Fiel
Externí odkaz:
https://doaj.org/article/f8d404f7925442bd80ad9b82f646981c
Publikováno v:
Applied Sciences, Vol 13, Iss 1, p 107 (2022)
Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square
Externí odkaz:
https://doaj.org/article/d8174fafe7c04f9e838c919b5aaebe5b
Publikováno v:
Applied Sciences, Vol 11, Iss 24, p 12075 (2021)
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping conc
Externí odkaz:
https://doaj.org/article/989f78fedee848508ab4bf34a832c7ba
Publikováno v:
Micromachines, Vol 11, Iss 6, p 598 (2020)
Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrica
Externí odkaz:
https://doaj.org/article/1a852b86f690437a89290dea070f408b
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 71:1646-1650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f6b162d081ed41ffea070c4216abea
https://doi.org/10.5370/kiee.2022.71.11.1646
https://doi.org/10.5370/kiee.2022.71.11.1646
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 71:871-875
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10dbc33e156226d8370cd449eef5fead
https://doi.org/10.5370/kiee.2022.71.6.871
https://doi.org/10.5370/kiee.2022.71.6.871
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:119-125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c88914d99507f9420765a016a1dd08c1
https://doi.org/10.5573/jsts.2021.21.2.119
https://doi.org/10.5573/jsts.2021.21.2.119
Autor:
Jeong Hyun Moon, Sang Cheol Kim, Ogyun Seok, Wook Bahng, Nam-Kyun Kim, Moon Kyong Na, In Ho Kang, Hyoung Woo Kim
Publikováno v:
Transactions on Electrical and Electronic Materials. 22:115-120
This paper presents an overall optimization procedure and the electrical performances of 1.2 kV/10 A 4H-SiC junction barrier Schottky (JBS) diodes with high current density. To achieve high current density, the epi-layer, the design parameters for ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1560845a7f6ea357c4fc5c347ea1a40
https://doi.org/10.1007/s42341-021-00291-7
https://doi.org/10.1007/s42341-021-00291-7
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 69:1886-1889
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f219a23dea32ad4bced2cfff8a84e7
https://doi.org/10.5370/kiee.2020.69.12.1886
https://doi.org/10.5370/kiee.2020.69.12.1886