Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Oguz Odabasi"'
Autor:
Oguz Odabasi, Amir Ghobadi, Turkan Gamze Ulusoy Ghobadi, Yakup Unal, Gurur Salkim, Gunes Basar, Bayram Butun, Ekmel Ozbay
Publikováno v:
IEEE Electron Device Letters
In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause cr
Autor:
Salahuddin Zafar, Yilmaz Durna, Hasan Kocer, Busra Cankaya Akoglu, Yunus Erdem Aras, Oguz Odabasi, Bayram Butun, Ekmel Ozbay
Publikováno v:
IEEE Transactions on Device and Materials Reliability
This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a two-stage X-band low-noise ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f18ed8e37aaad44433752da78d40e64
https://hdl.handle.net/11693/111380
https://hdl.handle.net/11693/111380
Publikováno v:
IEEE Electron Device Letters
In AlGaN/GaN high electron mobility transistors (HEMTs), the long-term operation of the device is adversely affected by threshold voltage ( Vth ) instability and current collapse. In this letter, using structural and electrical analyses, the impact o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e93df4335d23efd766252cfa4226f7a4
https://hdl.handle.net/11693/111928
https://hdl.handle.net/11693/111928
Publikováno v:
Semiconductor Science and Technology. 38:065002
This paper reports the influence of an ultrathin 1.5 nm atomic-layer-deposited HfO2 blanket layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H-SiC substrate. Transistors with a gate length of 250 nm and a sourc
Publikováno v:
ACS Applied Energy Materials
For most semiconductors, especially the visible-light-absorbing ones, the carrier diffusion length is significantly shorter than the light penetration depth, limiting their photoactivities. This limitation could be mitigated through the use of subwav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7548e71e2c9a4518ca9063b11be40fee
https://hdl.handle.net/11693/111975
https://hdl.handle.net/11693/111975
Publikováno v:
IEEE Transactions on Electron Devices
In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices wit
Autor:
Erdem Aras, Busra Cankaya Akoglu, Bayram Butun, Kubra Elif Asan, Dogan Yilmaz, Ekmel Ozbay, Oguz Odabasi, Salahuddin Zafar
Publikováno v:
IEEE Transactions on Electron Devices
In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0759003a08555c292d65a1cc8f6e21a
https://aperta.ulakbim.gov.tr/record/236312
https://aperta.ulakbim.gov.tr/record/236312