Výsledky vyhledávání - "Ofiare, Afesomeh"

Dissertation/ Thesis

Components and circuits for tunneling diode based high frequency sources

Autor: Ofiare, Afesomeh

Terahertz (THz) technology has been generating a lot of interest because of the potential applications for systems working in this frequency range. However, to fully achieve this potential, effective and efficient ways of generating controlled signal

Externí odkaz: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.691240

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In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes with High-Power Performance in the Low-Terahertz Band

Autor: Cimbri, Davide, Morariu, Razvan, Ofiare, Afesomeh, Wasige, Edward

Publikováno v: 2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)

We report about an In0.53Ga0.47As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quant

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ff2ea8a139c8425d3276050c984eba
https://eprints.gla.ac.uk/270501/2/270501.pdf

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High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure

Autor: Dhongde, Aniket, Taking, Sanna, Elksne, Maira, Ofiare, Afesomeh, Karami, Kaivan, Dwidar, Mahmud, Al-Khalidi, Abdullah, Wasige, Edward

Publikováno v: 45th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits

This paper reports on the processing and device characteristics of\ud AlGaN/GaN high electron mobility transistors using buffer-free\ud GaN grown on SiC substrate. This new concept of thin\ud AlGaN/GaN heterostructure (2-3μm). As-grown epitaxial str

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e49b25839af2325b84a01370cfb6af28
https://eprints.gla.ac.uk/271905/1/271905.pdf

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Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors

Autor: Karami, Kaivan, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira, Dhongde, Aniket, Al-Khalidi, Abdullah, Wasige, Edward

Publikováno v: WOCSDICE EXMATEC 2022

In this work we report on the processing and device characteristics\ud of AlGaN/GaN metal-oxide/insulator-semiconductor high\ud electron mobility transistors (MOS-HEMTs) employing different\ud types of dielectric layers such as SiO2, Si3N4 and Al2O3.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::43c833d857350bab889fc447ebf297f1
https://eprints.gla.ac.uk/270672/1/270672.pdf

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Analysis of stability of nano- vs micro-sized resonant tunnelling diode (RTD) devices for future neuromorphic computing applications

Autor: Al-Taai, Qusay Raghib Al, Wang, Jue, Morariu, Razvan, Ofiare, Afesomeh, Al-Khalidi, Abdullah, Wasige, Edward

In this paper, we report on the fabrication of micrometre and nanometre-sized resonant tunnelling diode (RTD) devices which may be used as excitable neuromorphic spike generators. The fabrication processes using photolithography were applied for micr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::6602b393b0df133bf448562df1d2bd55
https://eprints.gla.ac.uk/253148/1/253148.pdf

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