Zobrazeno 1 - 10
of 1 930
pro vyhledávání: '"Ofiare, A."'
Publikováno v:
International Journal of Nanoelectronics & Materials. 2021 Special Issue, Vol. 14, p29-36. 8p.
Autor:
Taking, Sanna, Ofiare, Afesomeh, Ahmad, Norhawati, Musa, Ahmad Z., Sendekisager, Kogunen, Isa, Muammar M., Kasjoo, Shahrir R., Wasige, Edward
Publikováno v:
AIP Conference Proceedings; 2024, Vol. 2898 Issue 1, p1-6, 6p
Publikováno v:
2022 17th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a6cf3d6bfe5eb2c88b6e7b5559893d
https://doi.org/10.23919/eumic54520.2022.9923482
https://doi.org/10.23919/eumic54520.2022.9923482
Autor:
Ofiare, Afesomeh, Taking, Sanna, Elksne, Maira, Al-Khalidi, Abdullah, Ghosh, S., Kappers, M., Oliver, R.A., Wasige, Edward
Publikováno v:
UK Semiconductors 2022
No abstract available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::8c3d81da31c2fa917ab8847a6af8eff6
https://eprints.gla.ac.uk/271577/1/271577.pdf
https://eprints.gla.ac.uk/271577/1/271577.pdf
Publikováno v:
2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
We report about an In0.53Ga0.47As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ff2ea8a139c8425d3276050c984eba
https://eprints.gla.ac.uk/270501/2/270501.pdf
https://eprints.gla.ac.uk/270501/2/270501.pdf
Autor:
Dhongde, Aniket, Taking, Sanna, Elksne, Maira, Ofiare, Afesomeh, Karami, Kaivan, Dwidar, Mahmud, Al-Khalidi, Abdullah, Wasige, Edward
Publikováno v:
45th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits
This paper reports on the processing and device characteristics of\ud AlGaN/GaN high electron mobility transistors using buffer-free\ud GaN grown on SiC substrate. This new concept of thin\ud AlGaN/GaN heterostructure (2-3μm). As-grown epitaxial str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e49b25839af2325b84a01370cfb6af28
https://eprints.gla.ac.uk/271905/1/271905.pdf
https://eprints.gla.ac.uk/271905/1/271905.pdf
Autor:
Karami, Kaivan, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira, Dhongde, Aniket, Al-Khalidi, Abdullah, Wasige, Edward
Publikováno v:
WOCSDICE EXMATEC 2022
In this work we report on the processing and device characteristics\ud of AlGaN/GaN metal-oxide/insulator-semiconductor high\ud electron mobility transistors (MOS-HEMTs) employing different\ud types of dielectric layers such as SiO2, Si3N4 and Al2O3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::43c833d857350bab889fc447ebf297f1
https://eprints.gla.ac.uk/270672/1/270672.pdf
https://eprints.gla.ac.uk/270672/1/270672.pdf
Autor:
Jungang Zhang, Rupam Das, Daniel Hoare, Huxi Wang, Afesomeh Ofiare, Nosrat Mirzai, John Mercer, Hadi Heidari
Publikováno v:
IEEE Transactions on Antennas and Propagation. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c278f89c8ae6b3c159e7b2ee17d803
https://doi.org/10.1109/tap.2023.3266786
https://doi.org/10.1109/tap.2023.3266786
Publikováno v:
Davide Cimbri
No abstract available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::44e82aa5025c1d054e81c81e4df67863
https://eprints.gla.ac.uk/253151/2/253151.pdf
https://eprints.gla.ac.uk/253151/2/253151.pdf
Autor:
Al-Taai, Qusay Raghib Al, Wang, Jue, Morariu, Razvan, Ofiare, Afesomeh, Al-Khalidi, Abdullah, Wasige, Edward
In this paper, we report on the fabrication of micrometre and nanometre-sized resonant tunnelling diode (RTD) devices which may be used as excitable neuromorphic spike generators. The fabrication processes using photolithography were applied for micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::6602b393b0df133bf448562df1d2bd55
https://eprints.gla.ac.uk/253148/1/253148.pdf
https://eprints.gla.ac.uk/253148/1/253148.pdf