Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Ofer Sneh"'
Publikováno v:
Thin Solid Films. 402:248-261
Atomic layer deposition (ALD) of ultrathin high-K dielectric films has recently penetrated research and development lines of several major memory and logic manufacturers due to the promise of unprecedented control of thickness, uniformity, quality an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150000d67d3e092f623d92c97e2cbd51
https://doi.org/10.1016/s0040-6090(01)01678-9
https://doi.org/10.1016/s0040-6090(01)01678-9
Publikováno v:
Surface Review and Letters. :435-448
SiO 2 thin films were deposited with atomic layer control using self-limiting surface reactions. The SiO 2 growth was achieved by separating the binary reaction SiCl 4+ 2H 2 O → SiO 2+ 4HCl into two half-reactions. Successive application of the hal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18892d1fa6cd7a73975de6d4d27d56dc
https://doi.org/10.1142/s0218625x99000433
https://doi.org/10.1142/s0218625x99000433
Publikováno v:
Surface Science. 364:367-379
Atomic layer control of SiO2 film growth can be achieved on silicon surfaces using the SiCl4 +H2O reaction applied in an ABAB … binary reaction sequence (A) SiCl ∗ + H 2 O→ SiOH ∗ + HCl , (B) SiOH ∗ + SiCl 4 → SiOSiCl 3 ∗ + HCl , where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61d0e8df00ade137761aeb6ce0cfaa6
https://doi.org/10.1016/0039-6028(96)00595-x
https://doi.org/10.1016/0039-6028(96)00595-x
Publikováno v:
Surface Science. 364:61-78
The adsorption and desorption kinetics of H2O were studied on a well-defined, fully hydroxylated SiO2 surface. The measurements were performed on a planar, thin SiO2 film grown on Si(100) using chemical vapor deposition techniques. The experiments we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f314f5e0fa101a53483c9bbf34aa72b3
https://doi.org/10.1016/0039-6028(96)00592-4
https://doi.org/10.1016/0039-6028(96)00592-4
Publikováno v:
Surface Science. 334:135-152
The atomic layer control of SiO2 growth can be accomplished using binary reaction sequence chemistry. To achieve this atomic layer growth, the binary reaction SiCl4 + 2H2O → SiO2 + 4 HCl can be divided into separate half-reactions: (A) SiOH ∗
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d99a65eab6e490720b6cff523918684
https://doi.org/10.1016/0039-6028(95)00471-8
https://doi.org/10.1016/0039-6028(95)00471-8
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1853-1860
The adsorption kinetics of H2O on Si(111)7×7 and Si(111)7×7 modified by laser annealing were studied using laser‐induced thermal desorption and temperature‐programmed desorption techniques at temperatures between 180 and 800 K. The laser‐anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b45c1baba8f620fefed948df793457a
https://doi.org/10.1116/1.579670
https://doi.org/10.1116/1.579670
Autor:
Ofer Sneh, Steven M. George
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:493-496
A sample manipulator with a gas‐thermal switch was designed for high pressure surface science experiments in an ultrahigh vacuum (UHV) apparatus. The gas‐thermal switch coupled the sample mount to the cryostat using helium gas. When helium gas wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86650dffb9bb1edd4b107568dada7579
https://doi.org/10.1116/1.579386
https://doi.org/10.1116/1.579386
Publikováno v:
Applied Surface Science. :460-467
Sequential ABAB… surface chemical reactions can be employed for atomic layer controlled deposition. We have examined the binary reactions SiCl 4 +2H 2 O⋌SiO 2 +4HCl for SiO 2 deposition and 2Al(CH 3 ) 3 +3H 2 O ⋌ Al 2 O 3 + 6CH 4 for Al 2 O 3 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a04132b61ceac0d39a21d353ba2adcc1
https://doi.org/10.1016/0169-4332(94)90259-3
https://doi.org/10.1016/0169-4332(94)90259-3
Autor:
Ofer Sneh, Steven M. George
Publikováno v:
The Journal of Chemical Physics. 101:3287-3297
The surface diffusion of xenon was studied on a stepped Pt(11,11,9) surface. Laser‐induced thermal desorption (LITD) techniques were employed to examine the coverage dependence and anisotropy of the Xe diffusion. The coverage dependence of the Xe d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::426d428b01cb0690adda07d500875a5b
https://doi.org/10.1063/1.467575
https://doi.org/10.1063/1.467575
Publikováno v:
The Journal of Physical Chemistry. 98:6068-6074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7452d5e2c9344737791808ebb07fa50e
https://doi.org/10.1021/j100075a005
https://doi.org/10.1021/j100075a005