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Akademický článek

A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications

Autor: Hyunjin Ahn, Kyutaek Oh, Se-Eun Choi, Dong-Hee Son, Ilku Nam, Kyoohyun Lim, Ockgoo Lee

Publikováno v: Nanomaterials, Vol 14, Iss 3, p 262 (2024)

The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output

Externí odkaz: https://doaj.org/article/59b329f9597848389fb52127aba19c1a

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Akademický článek

28-GHz CMOS Up-Conversion Mixer With Improved LO Second-Harmonic Leakage Signal Suppression for 5G Applications

Autor: Suyeon Lee, Yangji Jeon, Dae-Young Yoon, Ockgoo Lee, Donggu Im, Ilku Nam

Publikováno v: IEEE Access, Vol 10, Pp 57003-57011 (2022)

A CMOS up-conversion mixer with an intermediate frequency (IF) amplifier and local oscillator (LO) buffer is presented for mobile 28-GHz-band 5G dual-conversion transceivers. A balun transformer with improved common-mode rejection ratio characteristi

Externí odkaz: https://doaj.org/article/16c4bc9a871b4cdfa54d1c4b8a94565e

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Akademický článek

Highly Efficient HBT Power Amplifier Using High-Q Single- and Two-Winding Transformer With IMD3 Cancellation

Autor: Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Publikováno v: IEEE Access, Vol 9, Pp 85060-85070 (2021)

This paper presents a highly efficient InGaP/GaAs HBT power amplifier (PA) implemented using a proposed high- $Q$ single- and two-winding transformer. A single- and two-winding transformer is designed with a printed circuit board (PCB) to combine the

Externí odkaz: https://doaj.org/article/6d75dc04fd4d48ab9bc05236e88f1cb1

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Akademický článek

A Highly Efficient and Linear mm-Wave CMOS Power Amplifier Using a Compact Symmetrical Parallel–Parallel Power Combiner With IMD3 Cancellation for 5G Applications

Autor: Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Publikováno v: IEEE Access, Vol 9, Pp 150304-150321 (2021)

This paper presents a fully integrated linear power amplifier (PA) in a 65-nm CMOS process for mm-wave 5G applications. The proposed linear PA employs a compact symmetrical 4-way parallel–parallel power combiner with a third-order intermodulation d

Externí odkaz: https://doaj.org/article/4ce3024ac42c40ab8b85aa4313550afa

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