Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Ocker, Berthold"'
Autor:
Skowroński, Witold, Grochot, Krzysztof, Rzeszut, Piotr, Łazarski, Stanisław, Gajoch, Grzegorz, Worek, Cezary, Kanak, Jarosław, Stobiecki, Tomasz, Langer, Jürgen, Ocker, Berthold, Vafaee, Mehran
Materials with significant spin-orbit coupling enable efficient spin-to-charge interconversion, which can be utilized in novel spin electronic devices. A number of elements, mainly heavy-metals (HM) have been identified to produce a sizable spin curr
Externí odkaz:
http://arxiv.org/abs/2110.11483
Autor:
Casiraghi, Arianna, Magni, Alessandro, Diez, Liza Herrera, Langer, Juergen, Ocker, Berthold, Pasquale, Massimo, Ravelosona, Dafiné, Durin, Gianfranco
Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are often characterised by vanishing or modest values of interfacial Dzyaloshinskii-Moriya interaction (DMI), which results in purely Bloch or mixed Bloch-N\'eel domain walls (DWs). Here w
Externí odkaz:
http://arxiv.org/abs/1907.03708
Autor:
Schulz, Tomek, Lee, Kyujoon, Krüger, Benjamin, Conte, Roberto Lo, Karnad, Gurucharan V., Garcia, Karin, Vila, Laurent, Ocker, Berthold, Ravelosona, Dafiné, Kläui, Mathias
Publikováno v:
Physical Review B 95, 224409 (2017)
Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored spin-orbit t
Externí odkaz:
http://arxiv.org/abs/1902.04665
Autor:
Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge
Externí odkaz:
http://arxiv.org/abs/1708.04111
Autor:
Cubukcu, Murat, Boulle, Olivier, Mikuszeit, Nikolaï, Hamelin, Claire, Brächer, Thomas, Lamard, Nathalie, Cyrille, Marie-Claire, Buda-Prejbeanu, Liliana, Garello, Kevin, Miron, Ioan Mihai, Klein, O., de Loubens, G., Naletov, V. V., Langer, Juergen, Ocker, Berthold, Gambardella, Pietro, Gaudin, Gilles
Publikováno v:
IEEE Transactions on Magnetics, 99, (2018)
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, whic
Externí odkaz:
http://arxiv.org/abs/1509.02375
Autor:
Schulz, Tomek, Alejos, Oscar, Martinez, Eduardo, Hals, Kjetil M. D., Garcia, Karin, Lee, Kyujoon, Conte, Roberto Lo, Karnad, Gurucharan V., Moretti, Simone, Ocker, Berthold, Ravelosona, Dafiné, Brataas, Arne, Kläui, Mathias
We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current
Externí odkaz:
http://arxiv.org/abs/1507.02435
Autor:
Lin, Weiwei, Vernier, Nicolas, Agnus, Guillaume, Garcia, Karin, Ocker, Berthold, Zhao, Weisheng, Fullerton, Eric E., Ravelosona, Dafiné
Publikováno v:
Nat. Commun. 7 (2016) 13532
Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the creep regi
Externí odkaz:
http://arxiv.org/abs/1411.5267
Autor:
Sievers, Sibylle, Liebing, Niklas, Serrano-Guisan, Santiago, Ferreira, Ricardo, Paz, Elvira, Caprile, Ambra, Manzin, Alessandra, Pasquale, Massimo, Skowroński, Witold, Stobiecki, Tomasz, Rott, Karsten, Reiss, Günter, Langer, Jürgen, Ocker, Berthold, Schumacher, Hans Werner
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic
Externí odkaz:
http://arxiv.org/abs/1411.4868
Autor:
Fang, Bin, Carpentieri, Mario, Hao, Xiaojie, Jiang, Hongwen, Katine, Jordan A., Krivorotov, Ilya N., Ocker, Berthold, Langer, Juergen, Wang, Kang L., Zhang, Baoshun, Azzerboni, Bruno, Amiri, Pedram Khalili, Finocchio, Giovanni, Zeng, Zhongming
Publikováno v:
Nat. Comm. 7, 11259, (2016)
Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of thei
Externí odkaz:
http://arxiv.org/abs/1410.4958
Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
Autor:
Cubukcu, Murat, Boulle, Olivier, Drouard, Marc, Garello, Kevin, Avci, Can Onur, Miron, Ioan Mihai, Langer, Juergen, Ocker, Berthold, Gambardella, Pietro, Gaudin, Gilles
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular T
Externí odkaz:
http://arxiv.org/abs/1310.8235