Zobrazeno 1 - 10
of 2 682
pro vyhledávání: '"Obata, T"'
Publikováno v:
Phys. Rev. B 96, 155414 (2017)
We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right dot with the
Externí odkaz:
http://arxiv.org/abs/1710.03378
Autor:
Yoneda, J., Otsuka, T., Nakajima, T., Takakura, T., Obata, T., Pioro-Ladrière, M., Lu, H., Palmstrøm, C., Gossard, A. C., Tarucha, S.
We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinc
Externí odkaz:
http://arxiv.org/abs/1411.6738
Autor:
Obata, T., Takeda, K., Kamioka, J., Kodera, T., Akhtar, W. M., Sawano, K., Oda, S., Shiraki, Y., Tarucha, S.
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams ar
Externí odkaz:
http://arxiv.org/abs/1311.2681
Autor:
Takeda, K., Obata, T., Fukuoka, Y., Akhtar, W. M., Kamioka, J., Kodera, T., Oda, S., Tarucha, S.
Publikováno v:
Appl. Phys. Lett. 102, 123113 (2013)
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current
Externí odkaz:
http://arxiv.org/abs/1304.0064
Autor:
Brunner, R., Shin, Y. -S., Obata, T., Pioro-Ladrière, M., Kubo, T., Yoshida, K., Taniyama, T., Tokura, Y., Tarucha, S.
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in
Externí odkaz:
http://arxiv.org/abs/1109.3342
Akademický článek
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Autor:
Pioro-Ladriere, M., Obata, T., Tokura, Y., Shin, Y. -S., Kubo, T., Yoshida, K., Taniyama, T., Tarucha, S.
The rapidly rising fields of spintronics and quantum information science have led to a strong interest in developing the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that i
Externí odkaz:
http://arxiv.org/abs/0805.1083
A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612314
Autor:
Fukuda, M., Zalalutdinov, M. K., Kovacik, V., Minoguchi, T., Obata, T., Kubota, M., Sonin, E. B.
Publikováno v:
Phys. Rev. B 71, 212502 (2005)
Detailed study of torsional oscillator experiments under steady rotation up to 6.28 rad/sec is reported for a 4He superfluid monolayer film formed in 1 micrometer-pore diameter porous glass. We found a new dissipation peak with the height being in pr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0405092
Autor:
Obata, T., Kubota, M.
The vortex pair phase field is calculated, through a solution of the Laplace equation, for a superfluid film adsorbed on the surface of a model 3D connected porous medium. A number of different vortex-antivortex pair configurations are considered as
Externí odkaz:
http://arxiv.org/abs/cond-mat/0207740