Zobrazeno 1 - 10
of 363
pro vyhledávání: '"ONIDA, G."'
Autor:
Vanacore, G. M., Chaigneau, M., Barrett, N., Bollani, M., Boioli, F., Salvalaglio, M., Montalenti, F., Manini, N., Caramella, L., Biagioni, P., Chrastina, D., Isella, G., Renault, O., Zani, M., Sordan, R., Onida, G., Ossikovski, R., Drouhin, H. -J., Tagliaferri, A.
Publikováno v:
Physical Review B 88, 115309 (2013)
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoidi
Externí odkaz:
http://arxiv.org/abs/1306.1412
We present both theoretical ab initio GW and experimental angle-resolved photoemission (ARPES) and scanning tunneling (STS) spectroscopy results on TiSe2. With respect to the density-functional Kohn-Sham metallic picture, the many-body GW self-energy
Externí odkaz:
http://arxiv.org/abs/1103.2104
The electron--phonon coupling in fullerene C28 has been calculated from first principles. The value of the associated coupling constant lambda/N(0) is found to be a factor three larger than that associated with C60. Assuming similar values of the den
Externí odkaz:
http://arxiv.org/abs/cond-mat/0001133
The matrix elements of the deformation potential of C$_{70}$ are calculated by means of a simple, yet accurate solution of the electron-phonon coupling problem in fullerenes, based on a parametrization of the ground state electronic density of the sy
Externí odkaz:
http://arxiv.org/abs/cond-mat/0001047
Autor:
Breda, N., Broglia, R. A., Colo`, G., Roman, H. E., Alasia, F., Onida, G., Ponomarev, V., Vigezzi, E.
A simple, yet accurate solution of the electron-phonon coupling problem in C_{60} is presented. The basic idea behind it is to be found in the parametrization of the ground state electronic density of the system calculated making use of ab-initio met
Externí odkaz:
http://arxiv.org/abs/cond-mat/9801197
Akademický článek
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Publikováno v:
Journal of Physics: Condensed Matter
Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::dc13c1c71c5b8967a5a85880c384822d
http://hdl.handle.net/10281/212301
http://hdl.handle.net/10281/212301
Autor:
Luppi, Eleonora, Degoli, Elena, Cantele, G., Ossicini, Stefano, Magri, Rita, Ninno, D., Bisi, O., Pulci, O., Onida, G., Gatti, M., Incze, A., Del Sole, R.
Publikováno v:
In Optical Materials 2005 27(5):1008-1013
Publikováno v:
Epioptics-11 - Proceedings of the 49th Course of the International School of Solid State Physics. 2012, p107-113. 7p.