Zobrazeno 1 - 10
of 148
pro vyhledávání: '"OLSHANETSKY, E. B."'
Autor:
Levin, A. D., Gusev, G. M., Hernandez, F. G. G., Olshanetsky, E. B., Kovalev, V. M., Entin, M. V., Mikhailov, N. N.
Publikováno v:
Physical Review RESEARCH 6, 023121 (2024)
The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it's worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing multiple electron
Externí odkaz:
http://arxiv.org/abs/2405.02233
Autor:
Snegirev, A. V., Kovalev, V. M., Entin, M. V., Olshanetsky, E. B., Mikhailov, N. N., Kvon, Z. D.
The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate v
Externí odkaz:
http://arxiv.org/abs/2403.13387
Autor:
Gusev, G. M., Levin, A. D., Olshanetsky, E. B., Kvon, Z. D., Kovalev, V. M., Entin, M. V., Mikhailov, N. N.
Publikováno v:
Phys.Rev.B, v. 109, 035302 (2024)
In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the he
Externí odkaz:
http://arxiv.org/abs/2401.01277
Autor:
Ferreira, G. J., Candido, D. R., Hernandez, F. G. G., Gusev, G. M., Olshanetsky, E. B., Mikhailov, N. N., Dvoretsky, S. A.
Publikováno v:
Scientific reports 12 (1), 2617 (2022)
Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of triple HgTe qu
Externí odkaz:
http://arxiv.org/abs/2112.01307
Publikováno v:
2D Mater. 9, 015021, 2022
Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width random devi
Externí odkaz:
http://arxiv.org/abs/2111.15530
Publikováno v:
Physical Review RESEARCH 3, L032031 (2021)
The magnetotransport properties of massless Dirac fermions in a gapless HgTe quantum well are investigated. In samples with narrow channels, a large negative magnetoresistance with a Lorentzian profile is observed, which is interpreted as a manifesta
Externí odkaz:
http://arxiv.org/abs/2107.14761
Autor:
Gusev, G. M., Olshanetsky, E. B., Hernandez, F. G. G., Raichev, O. E., Mikhailov, N. N., Dvoretsky, S. A.
Publikováno v:
Physical Review B 103, 035302 (2021)
The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The pres
Externí odkaz:
http://arxiv.org/abs/2101.05266
Autor:
Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., Dvoretsky, S. A.
Publikováno v:
Physics - Uspekhi, 63(7) 629 - 647 (2020)
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion trans
Externí odkaz:
http://arxiv.org/abs/2012.13738
Autor:
Gusev, G. M., Olshanetsky, E. B., Hernandez, F. G. G., Raichev, O. E., Mikhailov, N. N., Dvoretsky, S. A.
Publikováno v:
Phys. Rev. B 101, 241302 (2020)
The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leadi
Externí odkaz:
http://arxiv.org/abs/2004.04062
Publikováno v:
Invited Review article, Sol.St.Commun., Volume 302, 113701, November 2019
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposit
Externí odkaz:
http://arxiv.org/abs/1910.04738