Zobrazeno 1 - 10
of 854
pro vyhledávání: '"OFETs"'
Autor:
Shaoling Bai, Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Felix Talnack, Vojtech Millek, Anupam Prasoon, Jinxin Liu, Kerstin Arnhold, Susanne Boye, Xinliang Feng, Stefan C. B. Mannsfeld
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract Here, the effect of thermal annealing (TA) on the stability of solution‐sheared thin films of the semiconducting polymer poly[2,5‐bis(2‐octyldodecyl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione‐3,6‐diyl)‐alt‐(2,2′;5′,2′
Externí odkaz:
https://doaj.org/article/d14a8dd603f14e1aba3894fb40db097d
Autor:
Gargi Konwar, Shree Prakash Tiwari
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100102- (2024)
In this paper, firstly, reports on use of various nature originated polysaccharides as gate dielectric candidates for organic field effect transistors (OFETs) to achieve eco-friendliness and eventual biodegradability in devices, are summarized. To em
Externí odkaz:
https://doaj.org/article/dd7d490833e644aa93412bfa0a7180cc
Autor:
Iván Torres-Moya
Publikováno v:
Applied Sciences, Vol 14, Iss 18, p 8454 (2024)
Advancements in electronic device technology have led to an exponential growth in demand for more efficient and versatile transistors. In this context, organic field-effect transistors (OFETs) have emerged as a promising alternative due to their uniq
Externí odkaz:
https://doaj.org/article/88417949badc4493bc3b50d97c3648ae
Autor:
Yifan Guo, Keqiao Li, Deng Zou, Yang Li, Lizhi Yan, Zhenfei He, Tao Zou, Baoling Huang, Paddy Kwok Leung Chan
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract High‐quality organic field‐effect transistors (1L‐OFETs) based on monolayers have made significant progress and are expected to be key components in the development of next‐generation flexible electronics. However, a flexible, low‐
Externí odkaz:
https://doaj.org/article/d62eb27d9407498cae2c521c22629efe
Akademický článek
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Autor:
Jinhan Chen, Zheng Wang, Zhifeng Deng, Ligui Chen, Xuhui Wu, Yihan Gao, Yumeng Hu, Mei Li, Hongzhen Wang
Publikováno v:
Frontiers in Chemistry, Vol 11 (2023)
Semiconductors are widely used in electron devices. With the development of wearable soft-electron devices, conventional inorganic semiconductors are unable to meet the demand because of their high rigidity and high cost. Thus, scientists construct o
Externí odkaz:
https://doaj.org/article/85277d302232478fbd0a443b30a05e63
In Situ Coupling Applied Voltage and Synchrotron Radiation: Operando Characterization of Transistors
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-10 (2022)
Abstract A compact voltage application setup has been developed for in situ electrical testing of organic field effect transistors in combination with X-ray scattering studies at a synchrotron beamlines. Challenges faced during real condition in-oper
Externí odkaz:
https://doaj.org/article/e00c648ce54b45c98da8dea17dbd7259
Akademický článek
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Publikováno v:
AIMS Materials Science, Vol 8, Iss 5, Pp 823-835 (2021)
A dual doped regio-regular poly(3-hexylthiophene-2, 5-diyl) (P3HT) was investigated to develop a multi-functional organic field effect transistor (OFET). OFETs based on a pristine P3HT and a dual doped P3HT (P3HT:PCBM:I2 blend) were fabricated to stu
Externí odkaz:
https://doaj.org/article/903fdc4a9fd44d898c2569d611aadccb
Akademický článek
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