Zobrazeno 1 - 10
of 76
pro vyhledávání: '"O.V. Sulima"'
Autor:
F. Dimroth, G. Lange, G. Letay, M. Hein, M.Z. Shvarts, V.D. Rumyantsev, O.V. Sulima, A. W. Bett, V.M. Andreev
Publikováno v:
Sixteenth European Photovoltaic Solar Energy Conference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa862568731f873ae910098959c49008
https://doi.org/10.4324/9781315074405-64
https://doi.org/10.4324/9781315074405-64
Akademický článek
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Publikováno v:
Thin Solid Films. 516:8712-8716
Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8df3b7ca7313798361a32d5540c306cb
https://doi.org/10.1016/j.tsf.2008.05.029
https://doi.org/10.1016/j.tsf.2008.05.029
Publikováno v:
Solar Energy Materials and Solar Cells. 90:68-81
Electric power generation using InGaAsSb and GaSb thermophotovoltaic (TPV) cells was investigated in a gas-fired heating furnace. Electric output characteristics of the TPV cells in the combustion-driven radiant sources are presented. For the InGaAsS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1f4b2fa366edbc3a29c27046916834
https://doi.org/10.1016/j.solmat.2005.02.002
https://doi.org/10.1016/j.solmat.2005.02.002
Autor:
O.V Sulima, Andreas W. Bett
Publikováno v:
Solar Energy Materials and Solar Cells. 66:533-540
In this paper we report on the recent progress in fabrication and simulation of GaSb photovoltaic (PV) cells with a Zn diffused emitter. The form of Zn profiles in the emitter has an essential impact on the power output of a PV cell. Different types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb3937ea5e845a132b40597f82cc02d
https://doi.org/10.1016/s0927-0248(00)00235-x
https://doi.org/10.1016/s0927-0248(00)00235-x
Autor:
R.L. Mueller, Z.A Shellenbarger, Andreas W. Bett, J.A. Cox, O.V. Sulima, L. C. Dinetta, J. B. McNeely, P. E. Sims, Michael G. Mauk
Publikováno v:
Journal of Crystal Growth. 211:189-193
Liquid-phase epitaxial (LPE) growth of low-bandgap III–V antimonides is developed for thermophotovoltaic and other optoelectronic device applications. Epitaxial layers of AlGaAsSb, InGaAsSb, and InAsSbP, with thicknesses up to 200 μm, can be grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2cc6c84c059c0b6d6baef9282d921a0
https://doi.org/10.1016/s0022-0248(99)00796-4
https://doi.org/10.1016/s0022-0248(99)00796-4
Publikováno v:
Journal of Crystal Growth. 181:9-16
In order to develop a simple and reproducible method to fabricate p-n structures on GaSb for optoelectronic devices, the Zn-diffusion into n-doped GaSb substrates was studied. Two methods of Zn-diffusion were experimentally investigated: (a) diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1916d0cf7dc6f909225727dbbae6cdf6
https://doi.org/10.1016/s0022-0248(97)00186-3
https://doi.org/10.1016/s0022-0248(97)00186-3
Publikováno v:
Journal of Crystal Growth. 146:305-309
Bismuth was studied as an alternative to Ga and Sn solvents for liquid phase epitaxy of GaAs. GaAs solubility in Bi was measured at T < 600°C. Sn and Zn were studied as dopants for the growth of n- and p-GaAs, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da40eab173fd193ac644a6560dbffa3f
https://doi.org/10.1016/0022-0248(94)00502-8
https://doi.org/10.1016/0022-0248(94)00502-8
Publikováno v:
Journal of Crystal Growth. 141:315-323
Low-temperature (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b202be6ed4fc8d0a618a123323d13b32
https://doi.org/10.1016/0022-0248(94)90232-1
https://doi.org/10.1016/0022-0248(94)90232-1
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
GaAs/GaSb tandem concentrator solar cells were fabricated. Both, the GaAs concentrator top cells and the GaSb bottom cells were produced using an inexpensive technology: LPE etchback-regrowth process and Zn vapor-phase diffusion process, respectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238f560071aa602b495dd1f0890c2a71
https://doi.org/10.1109/pvsc.1997.654240
https://doi.org/10.1109/pvsc.1997.654240