Zobrazeno 1 - 10
of 205
pro vyhledávání: '"O.V. Snigirev"'
Autor:
G. V. Presnova, A. A. Skorik, Vladimir A. Krupenin, M. Yu. Rubtsova, I. V. Bozhev, Denis E. Presnov, O.V. Snigirev, I. I. Tsiniaikin, A. A. Kamalov, S. T. Matskeplishvili
Publikováno v:
Moscow University Physics Bulletin. 75:645-656
Here we present an original CMOS compatible technique for fabrication a sensor system based on field-effect transistors with a nanowire channel and its application for the quantitative determination of thyroid-stimulating hormone (TSH) in model blood
Autor:
Vladimir A. Krupenin, Denis E. Presnov, I. V. Sapkov, S. Yu. Ryzhenkova, Sarkis A. Dagesyan, O.V. Snigirev, Artem S. Trifonov
Publikováno v:
Moscow University Physics Bulletin. 75:331-335
In this work, we present a nanoscale solid state structure, which is a 3D-array of tunnel-coupled arsenic dopants in silicon with a system of metallic electrodes leading to them. The structures of eight metal electrodes were fabricated on the inhomog
Publikováno v:
Moscow University Physics Bulletin. 75:336-341
The characteristics of a SQUID magnetometer-based readout system for a superconducting gyroscope-based inertial navigation system (INS) are investigated. The transformation function of the rotation angle of the gyroscope simulator to the voltage at t
Autor:
M. L. Chukharkin, N. V. Porokhov, A.G. Maresov, E.V. Zenova, Eduard E. Levin, Alexei Kalaboukhov, O.V. Snigirev
Publikováno v:
Physica C: Superconductivity and its Applications. 562:20-24
We present an investigation of the superconducting properties of thin YBa2Cu3O7-x (YBCO) films grown on [001] single-crystalline quartz substrates by pulsed laser deposition (PLD) technique. The growth of YBCO on quartz is challenging due to large cr
Autor:
Sarkis A. Dagesyan, I. V. Sapkov, O.V. Snigirev, Artem S. Trifonov, V. V. Shorokhov, I. V. Bozhev, Vladimir A. Krupenin, Denis E. Presnov, I.G. Prokhorova, Andrey A. Shemukhin
Publikováno v:
Moscow University Physics Bulletin. 74:165-170
Here we present CMOS compatible fabrication methods and the results of an experimental study of single-atom single-electron transistors made from silicon on insulator and based on various dopant atoms. Transistors with channels doped with arsenic (As
Akademický článek
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Akademický článek
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Publikováno v:
Physics of Metals and Metallography. 118:990-996
Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.
Autor:
E. S. Soldatov, V. V. Shorokhov, Sarkis A. Dagesyan, Vladimir A. Krupenin, Artem S. Trifonov, Denis E. Presnov, O.V. Snigirev
Publikováno v:
Moscow University Physics Bulletin. 72:474-479
We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator mate
Autor:
A. M. Kudzhaev, V. A. Sizov, E. O. Kuzmenko, V. A. Spiridonova, A. V. Melnichuk, T. V. Rotanova, O.V. Snigirev, E. A. Oleinichenko
Publikováno v:
Moscow University Physics Bulletin. 72:376-382
The binding to Lon protease through biotinylated aptamers whose structures contain G-quadruplex fragments with magnetic nanoparticles (MNPs) functionalized by streptavidin was investigated. The conditions of binding of target aptamers to MNPs are met