Zobrazeno 1 - 10
of 48
pro vyhledávání: '"O.S. Zinets"'
Autor:
Michael L. F Lerch, Mark I. Reinhard, Vladimir Perevertaylo, Igor E. Anokhin, Anatoly B. Rosenfeld, Marco Petasecca, Mark Yudelev, O.S. Zinets
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2290-2293
Electrical characteristics and neutron dosimetry properties of silicon based p-i-n diodes are presented in support of the applications in the sensors for beam monitoring and medical physics. Both the current-voltage (I-V) and capacitance-voltage (C-V
Autor:
P. J. Griffin, V.L. Perevertailo, O.S. Zinets, Mark I. Reinhard, Iwan Cornelius, V.I. Khivrich, Mark Yudelev, Michael L. F Lerch, Igor E. Anokhin, Anatoly B. Rosenfeld, Dimitri Alexiev, M. Pinkovskaya
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2367-2372
New nonionizing energy losses (NIEL) sensors based on silicon planar p-i-n diodes of different geometry have been investigated and their response to fast neutron field compared with bulk diodes. The possibility of obtaining a wide range of sensitivit
Autor:
O.S Zinets, I.E Anokhin
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 477:110-113
The influence of inhomogeneous electric fields on the charge collection and performances of silicon strip detectors is discussed. The distributions of the electric field in silicon strip detectors are obtained. Two-dimensional problem has been solved
Autor:
Igor E. Anokhin, Anatoly B. Rosenfeld, V.I. Khivrich, Barry J. Allen, P.G. Litovchenko, Martin G Carolan, G.I. Kaplan, O.S. Zinets
Publikováno v:
Radiation Protection Dosimetry. 84:349-352
Applications of p-i-n and MOSFET sensors in routine and emergency dosimetry as well as in medicine (neutron capture therapy) are discussed. P-i-n diode and MOSFET sensors were developed for use in mixed gamma and neutron fields. A new approach for do
Calculations of responses for experimentally studied silicon planar structures (epitaxial single-strip silicon diodes) have been carried out for various profiles of microbeams. The spatial distribution of responses on the microbeam radiation therapy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f947f7677d44ef73656d5e3f02f6461
Publikováno v:
2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC).
Because of very high intensity and pulsed nature of synchrotron radiation the nonlinear effects in recombination-generation kinetics must be taken into account in the response of silicon diodes under irradiation. Dependences of the charge carrier lif
Autor:
O.S. Zinets, P.G. Litovchenko, Yu. N. Pavlenko, L.I. Barabash, Anatoly B. Rosenfeld, Valery Pugatch, Yu. Vasilyev
Publikováno v:
IEEE Transactions on Nuclear Science. 39:645-649
A silicon strip detector for the coordinate determination of short-range charged particles, particularly heavy ions, has been developed. The detector has 28 p/sup +/n strips made by ion implantation. The pitch is 250 mu m, and the interstrip distance
Autor:
O.F. Nemets, Valery Pugatch, Yu. Vasilyev, I.A. Marusan, Yu. N. Pavlenko, L.I. Barabash, P.G. Litovchenko, O.S. Zinets, Anatoly B. Rosenfeld
Publikováno v:
Scopus-Elsevier
The evolution of the plasma tracks is studied for charged particles incident between strips of a silicon strip detector. The registration of the charges collected by adjacent strips at different times allows to obtain information about behavior of th
Autor:
Igor E. Anokhin, O.S. Zinets
Publikováno v:
2008 IEEE Nuclear Science Symposium Conference Record.
Silicon strip detectors with converters of neutrons into charge particles can be used as neutron position sensitive detectors. Such detectors are needed, for example, for high energy and neutron physics. The possibility of using the silicon strip det
Publikováno v:
2008 IEEE Nuclear Science Symposium Conference Record.
The electrical characteristics and neutron dosimetry properties of silicon based p-i-n diodes are presented in support of applications of the sensors in beam monitoring and medical physics. Both the current-voltage and capacitance-voltage characteris