A New Experimental Method of the Determination of the Evaporating Fields

Autor: O.L. Golubev

Publikováno v: Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1996, 06 (C5), pp.C5-153-C5-158. ⟨10.1051/jp4:1996525⟩

A new experimental method of the determination of the evaporating fields F ev based on Fowler-Nordheim theory is described. This method fits to any materials both refractory and fusible. Especially this method is effective for the thermo-field microp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad031dbc14ef8172679e1e251e97a4cb
https://doi.org/10.1051/jp4:1996525

Field evaporation of metals, alloys and compounds as a base for creation of point ion sources for nanotechnology

Autor: M.V. Loginov, V.N. Shrednik, O.L. Golubev

Publikováno v: XXIst International Symposium on Discharges and Electrical Insulation in Vacuum, 2004. Proceedings. ISDEIV..

In the work the results of studying of field evaporation of some metals, alloys and compounds are analyzed for use of these results for creation of the point sources of electrons and ions. The processes of field evaporation at temperatures are higher

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0f7c557fa5f08b02cc82206e2f5da3c
https://doi.org/10.1109/deiv.2004.1418596

Field emission properties of Si layers deposited on W tip

Autor: N.N. Chubun, B.Ch. Djubua, V.N. Shrednik, O.L. Golubev

Publikováno v: 9th International Vacuum Microelectronics Conference.

Field electron microscope was used for investigation of change of Si deposit on W tip as result of action of some field emission current. Two kinds of deposit have been prepared: 10 monoatomic layers on the W tip deposited at room temperature and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a563014b26a1f40e7c4964a96f873ade
https://doi.org/10.1109/ivmc.1996.601799

High Temperature Field Evaporation of the Metals and its Correlation with Surface Ionization

Autor: O.L. Golubev

Publikováno v: Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1996, 06 (C5), pp.C5-159-C5-164. ⟨10.1051/jp4:1996526⟩

High temperature field evaporation of It and Pt was investigated at the T = 1400 - 1700 K and electric fields F - I V/A by field electron, ion and evaporation microscopy. The Arrenius plot was obtained for the process of field evaporation of Pt in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a56ffa3a090c9cc36dbb128f8b20ecac
https://hal.archives-ouvertes.fr/jpa-00254405/file/ajp-jp4199606C526.pdf

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