Zobrazeno 1 - 10
of 71
pro vyhledávání: '"O.J. Pitts"'
Publikováno v:
Journal of Crystal Growth. 310:4858-4861
InAsSb/InPSb heterojunctions and InAsSb homojunctions were grown by metalorganic vapor phase epitaxy (MOVPE) on GaSb for potential mid-infrared photodetector applications. Despite the presence of a large miscibility gap for both InAsSb and InPSb allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cbcd8db854b4b0686743607560c0bc5
https://doi.org/10.1016/j.jcrysgro.2008.07.015
https://doi.org/10.1016/j.jcrysgro.2008.07.015
Publikováno v:
Journal of Crystal Growth. 297:345-351
The design, modeling, and experimental verification of a novel optical showerhead growth chamber for organometallic vapor phase epitaxy (OMVPE) is presented. The reactor design incorporates a transparent quartz showerhead which provides large apertur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f8b73d65f21d5a1c7a6336537c1ff5
https://doi.org/10.1016/j.jcrysgro.2006.10.200
https://doi.org/10.1016/j.jcrysgro.2006.10.200
Publikováno v:
Journal of Crystal Growth. 269:187-194
Heterostructures containing monolayer (ML) and submonolayer GaSb insertions in GaAs were grown using organometallic vapour phase epitaxy. At the GaAs-on-GaSb interface, strong intermixing occurs due to the surface segregation of Sb. To form structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59c8a0db981e29d80362ecebfd178be
https://doi.org/10.1016/j.jcrysgro.2004.05.013
https://doi.org/10.1016/j.jcrysgro.2004.05.013
Publikováno v:
Journal of Crystal Growth. 254:28-34
Sb segregation effects have been studied in structures grown by organometallic vapor phase epitaxy. The structures are formedby periodic exposure of the GaAs (0 0 1) surface to trimethylantimony (TMSb), followedby GaAs growth. Reflectance-difference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c10686f5ce8b126fb9cc045d7bbd8529
https://doi.org/10.1016/s0022-0248(03)01164-3
https://doi.org/10.1016/s0022-0248(03)01164-3
Publikováno v:
Journal of Crystal Growth. 248:259-264
Using time-resolved reflectance difference spectroscopy (RDS) we studied the formation of Sb and As overlayers on InP(1 0 0) under real-time metalorganic vapour-phase epitaxy conditions at 560°C. Exposure of a clean P-rich InP surface to TBAs vapour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8da00ab8dfe1a46614b2a6bf87bd07d
https://doi.org/10.1016/s0022-0248(02)01921-8
https://doi.org/10.1016/s0022-0248(02)01921-8
Publikováno v:
Journal of Crystal Growth. 248:274-278
High-resolution X-ray diffraction, Hall effect and secondary ion mass spectrometry measurements (SIMS) were used to study the effect of carbon doping on the lattice constant of GaSb. A linear increase in tensile strain as a function of carbon concent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8908bb44e5368a46e177cf69de502898
https://doi.org/10.1016/s0022-0248(02)01925-5
https://doi.org/10.1016/s0022-0248(02)01925-5
Publikováno v:
Journal of Crystal Growth. 248:249-253
MOVPE-grown n- and p-type (0 0 1) GaAsSb and GaSb were studied using in situ reflectance-difference spectroscopy (RDS), high-resolution X-ray diffraction and Hall measurements. We report RD spectra at 550°C and at room temperature, and the effects o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fc407b4d8e5d321b482e9f975ea4d2a
https://doi.org/10.1016/s0022-0248(02)01892-4
https://doi.org/10.1016/s0022-0248(02)01892-4
Publikováno v:
Japanese Journal of Applied Physics. 41:1131-1135
We study the performance of staggered lineup NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) intended for ultrahigh speed applications. With a peak fT of 305 GHz (and fMAX=300 GHz), InP/GaAsSb/InP DHBTs are currently the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c3072ff05d79683c829a84af63818d
https://doi.org/10.1143/jjap.41.1131
https://doi.org/10.1143/jjap.41.1131
Autor:
Rodney D. Wiersma, C. X. Wang, Simon P. Watkins, O.J. Pitts, J. A. H. Stotz, Mike L. W. Thewalt
Publikováno v:
Journal of Electronic Materials. 30:1429-1432
The growth of carbon-doped GaSb by MOVPE has never been reported to our knowledge, despite increasing interest in carbon-doped GaAsSb alloys for heterojunction bipolar transistor applications. In this work, we report the use of carbon tetrachloride (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b35247452bc574c3590634126953b8
https://doi.org/10.1007/s11664-001-0197-6
https://doi.org/10.1007/s11664-001-0197-6
Publikováno v:
Journal of Electronic Materials. 30:1412-1416
We present a study of the growth of strained ultrathin GaSb quantum well (QW) layers in a GaAs host crystal by organometallic vapor phase epitaxy (OMVPE). We report surface anisotropy features observed by reflectance difference spectroscopy (RDS) dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb0743493eb1a29d10287d7b4e0b9359
https://doi.org/10.1007/s11664-001-0193-x
https://doi.org/10.1007/s11664-001-0193-x