Zobrazeno 1 - 10
of 78
pro vyhledávání: '"O.I. Velichko"'
Autor:
O.I. Velichko
Publikováno v:
Philosophical Magazine. 96:2412-2428
Modelling of radiation-enhanced diffusion (RED) of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faf48ef38b8ff50a2edccd663e032124
https://doi.org/10.1080/14786435.2016.1204020
https://doi.org/10.1080/14786435.2016.1204020
Autor:
O.I. Velichko
Publikováno v:
Applied Mathematical Modelling. 35:1134-1141
The stress-mediated diffusion of nonequilibrium point defects into the bulk of a semiconductor is investigated by computer simulation. It is assumed that the point defects are generated on the surface of a semiconductor and that in the course of diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bf4d8dd713b4cff6f547f5cd44aaf73
https://doi.org/10.1016/j.apm.2010.08.002
https://doi.org/10.1016/j.apm.2010.08.002
Autor:
O.I. Velichko, N.V. Kniazhava
Publikováno v:
Computational Materials Science. 48:409-412
A model for interstitial migration of ion implanted boron during rapid thermal annealing of the silicon layers amorphized by implantation of germanium has been developed. It is supposed that boron interstitials are generated continuously during the w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3990c067ccd0fd82425aa108570b0806
https://doi.org/10.1016/j.commatsci.2010.01.033
https://doi.org/10.1016/j.commatsci.2010.01.033
Autor:
Yu. P. Shaman, O.I. Velichko
Publikováno v:
Materials Science in Semiconductor Processing. 13:13-20
The diffusion equation for nonequilibrium interstitial impurity atoms in the form convenient for numerical solution has been obtained. The proposed equation takes into account all different charge states of interstitial atoms and drift of all mobile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a1a3ed240c1676bbabd3f8a80ab124e
https://doi.org/10.1016/j.mssp.2010.02.001
https://doi.org/10.1016/j.mssp.2010.02.001
Autor:
O.I. Velichko, Olga Burunova
Publikováno v:
Defect and Diffusion Forum. :27-32
Simulation of arsenic clustering in Si at a temperature of 750 degrees Celsius has been carried out. It has been shown that considering the formation of singly or doubly negatively charged clusters that incorporate one or two arsenic atoms and point
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f13cb488ebf933d4c96e0f0890af05
https://doi.org/10.4028/www.scientific.net/ddf.295-296.27
https://doi.org/10.4028/www.scientific.net/ddf.295-296.27
Publikováno v:
physica status solidi c. 6:1979-1982
A model for nucleation and evolution of hydrogen induced platelets (HIPs) in silicon crystals during plasma treatment is proposed and analyzed. The derived equations allow one to trace the evolution of the concentration distribution for platelets dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3908be0f9c9d07683511dd060819eca
https://doi.org/10.1002/pssc.200881450
https://doi.org/10.1002/pssc.200881450
Publikováno v:
Solid State Phenomena. :425-430
The silicon substrates were hydrogenated at approximately room temperature and hydrogen concentration profiles vs. depth have been measured by SIMS. Czochralski grown (CZ) wafers, both n- and p-type conductivity, were used in the experiments under co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81ac59a7043b7a170e08bf0bc3c3b591
https://doi.org/10.4028/www.scientific.net/ssp.131-133.425
https://doi.org/10.4028/www.scientific.net/ssp.131-133.425
Autor:
Alexander K. Fedotov, Alexander V. Mazanik, Yu. P. Shaman, Anis Saad, V. V. Fedotova, O.I. Velichko
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:118-121
One of the principal trends in modern silicon electronics is a tendency to use low-energy ion implantation of hydrogen from plasma sources to achieve the required parameters of silicon materials and devices. For analysis of hydrogen diffusion in sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2f83a454bc3e3ae1d7ac58c11adfd1
https://doi.org/10.1016/j.nimb.2006.10.016
https://doi.org/10.1016/j.nimb.2006.10.016
Publikováno v:
physica status solidi (b). 243:2665-2671
A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs “beryllium atom–group III self-interstitial” is proposed and analyzed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf37198920af562a339dbc2000c2c041
https://doi.org/10.1002/pssb.200541272
https://doi.org/10.1002/pssb.200541272
Publikováno v:
Materials Science and Engineering: B. 123:176-180
A model of phosphorus clustering during high concentration diffusion in silicon is proposed and analyzed. The main feature of this model is the assumption that negatively charged phosphorus clusters can be formed. The formation of singly negatively c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed7891f58287e6794b3e88482a9d0ddd
https://doi.org/10.1016/j.mseb.2005.06.014
https://doi.org/10.1016/j.mseb.2005.06.014