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Perovskite CH 3 NH 3 PbI 3 crystals and films. Synthesis and characterization

Autor: S.A. Gromilov, Y.A. Zhivodkov, E.A. Maximovskiy, E.S. Yudanova, O.I. Semenova, N.A. Yeryukov, I.B. Troitskaia, T.S. Shamirzaev

Publikováno v: Journal of Crystal Growth. 462:45-49

Synthesis of organometal halide perovskite CH 3 NH 3 PbI 3 has received much attention recently because of promising photosensitive properties usable for solid state solar cell (SSSC). Here the crystals of tetragonal phase ( I 4/ mcm , a =8.8743 A, c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a6b92121738e41d656f4120466c7832
https://doi.org/10.1016/j.jcrysgro.2017.01.019

List of Contributors

Autor: I.O. Akhundov, V.Sh. Aliev, V.L. Alperovich, A.P. Anciferov, A.L. Aseev, A.K. Bakarov, I.I. Beterov, M.V. Budantsev, A.A. Bykov, A.V. Chaplik, A. Chin, I.A. Derebezov, D.V. Dmitriev, S.A. Dvoretsky, A.V. Dvurechenskii, M.V. Entin, V.M. Entin, L.I. Fedina, T.A. Gavrilova, K.V. Grachev, V.A. Gritsenko, A.K. Gutakovskii, A.V. Haisler, V.A. Haisler, D.G. Ikusov, D.R. Islamov, E.V. Ivanova, M.M. Kachanova, V.V. Kaichev, A.K. Kalagin, A.N. Karpov, D.M. Kazantsev, S.S. Kosolobov, A.S. Kozhukhov, D.A. Kozlov, V.D. Kuzmin, Z.D. Kvon, A.V. Latyshev, A.S. Mardezov, A.S. Medvedev, N.N. Mikhailov, A.G. Milekhin, D.A. Nasimov, I.G. Neizvestny, L.A. Nenasheva, E.B. Olshanetsky, T.V. Perevalov, A.G. Pogosov, D.A. Pokhabov, V.P. Popov, V.Ya. Prinz, V.G. Remesnik, S.V. Rihlicky, E.E. Rodyakina, D.I. Rogilo, K.N. Romanyuk, N.S. Rudaya, I.I. Ryabtsev, I.V. Sabinina, V.K. Sandyrev, A.A. Saraev, O.I. Semenova, D.V. Sheglov, A.A. Shevyrin, A.A. Shklyaev, V.A. Shvets, N.L. Shwartz, G.Yu. Sidorov, Yu.G. Sidorov, S.V. Sitnikov, E.V. Spesivcev, A.S. Terekhov, S.A. Teys, O.A. Tkachenko, V.A. Tkachenko, A.I. Toropov, D.B. Tretyakov, A.V. Tsarev, I.E. Tyschenko, I.N. Uzhakov, V.S. Varavin, S.A. Vitkalov, A.I. Yakimov, M.V. Yakushev, A.S. Yaroshevich, D.R.T. Zahn, M.V. Zamoryanskaya, E.Yu. Zhdanov, Yu.A. Zhivodkov

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0da5de83dc57a11bf54bce44596bd0a4
https://doi.org/10.1016/b978-0-12-810512-2.00028-7

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Autor: S.Ya. Khmel, Alexander G. Cherkov, R. G. Sharafutdinov, V. M. Karsten, O.I. Semenova, Anton K. Gutakovskii, L.D. Pokrovsky

Publikováno v: Surface and Coatings Technology. :1178-1181

We discuss a new method for low temperature epitaxial growth of silicon films by gas-jet electron beam plasma chemical vapor deposition in SiH 4 –Ar mixture. The growth rate up to 0.8 μm/min becomes possible at the substrate temperature below 650

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a21ca69d9e6fb5dd5e0e5be11d78482
https://doi.org/10.1016/s0257-8972(03)00452-3