Zobrazeno 1 - 10
of 33
pro vyhledávání: '"O.I. Dosunmu"'
Autor:
Jifeng Liu, Douglas D. Cannon, Bruno Ghyselen, Lionel C. Kimerling, O.I. Dosunmu, M.S. Unlu, M.K. Emsley
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 10:694-701
We have fabricated and characterized the first resonant cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication wavelength and have demonstrated over four-fold improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05460fbbcef8d2e1e663212f30d4c540
https://doi.org/10.1109/jstqe.2004.833900
https://doi.org/10.1109/jstqe.2004.833900
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:948-955
We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41d6edf7bac5345508a5d2b1ee021728
https://doi.org/10.1109/jstqe.2002.801692
https://doi.org/10.1109/jstqe.2002.801692
Publikováno v:
IEEE Photonics Technology Letters. 14:519-521
We report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d13364c2c5c01d5e0bda5c45e5d4b2a0
https://doi.org/10.1109/68.992597
https://doi.org/10.1109/68.992597
Autor:
Ekmel Ozbay, G. Ulu, M.S. Unlu, David H. Christensen, O.I. Dosunmu, Richard P. Mirin, Mutlu Gokkavas
Publikováno v:
IEEE Photonics Technology Letters
The large active-area AlGaAs-GaAs p-i-n photodiodes were reported with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60μmeter diameter. Resonant cavity enhanced photodetection was employed to improve the quantum efficiency. Performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd8e4d4a80cc7f9e9248f0c0f74c9484
https://doi.org/10.1109/68.969904
https://doi.org/10.1109/68.969904
Autor:
Yiwen Rong, Rebecca K. Schaevitz, Theodore I. Kamins, M. Selim Ünlü, Elizabeth H. Edwards, Ross M. Audet, Shen Ren, David A. B. Miller, O.I. Dosunmu, James S. Harris, Stephanie A. Claussen, Emel Tasyurek
Publikováno v:
IEEE Photonics Society Summer Topicals 2010.
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cd5e243906ae77b8b52f12574440689
https://doi.org/10.1109/phosst.2010.5553689
https://doi.org/10.1109/phosst.2010.5553689
Autor:
Ross M. Audet, Rebecca K. Schaevitz, Shen Ren, Elizabeth H. Edwards, Emel Tasyurek, M. Selim Ünlü, O.I. Dosunmu, David A. B. Miller, Stephanie A. Claussen
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
The strong electroabsorption modulation possible using the quantum-confined Stark effect in Ge/SiGe quantum wells provides the working mechanism for efficient, CMOS-compatible photonic integrated modulators. We describe such a device employing a surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f32575b4170d1bd4152a1cac86df23
https://doi.org/10.1364/cleo.2010.ctua5
https://doi.org/10.1364/cleo.2010.ctua5
Publikováno v:
2004 IEEE International Topical Meeting on Microwave Photonics (IEEE Cat. No.04EX859).
We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1edda575a5c338c4dcac65bcfe8faa6
https://doi.org/10.1109/mwp.2004.1396892
https://doi.org/10.1109/mwp.2004.1396892
Publikováno v:
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..
We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of 1540 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa5ded8c2832d73994666991f68c1d54
https://doi.org/10.1109/leos.2004.1363154
https://doi.org/10.1109/leos.2004.1363154
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
This paper presents Si-resonant cavity enhanced (RCE) photodetector arrays that have been fabricated and packaged with silicon based amplifiers to demonstrate the feasibility of a low cost monolithic silicon photoreceiver array. The 12 /spl times/ 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ec965b72fa6734b3e708d608429d38
https://doi.org/10.1109/leos.2003.1251603
https://doi.org/10.1109/leos.2003.1251603
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
In this paper, we have fabricated a resonant cavity enhanced (RCE) Ge-on-double-silicon on insulator (SOI) photodetector for operation around the 1550 nm communication wavelength. The enhanced response of this detector is attributed to both the reson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a0332bcf3e202d0c84abf3fb472aa2
https://doi.org/10.1109/leos.2003.1253069
https://doi.org/10.1109/leos.2003.1253069