Zobrazeno 1 - 10
of 30
pro vyhledávání: '"O.B. Koretskaya"'
Autor:
D.L. Budnitsky, D.Y. Mokeev, V. A. Novikov, A. V. Tyazhev, G.I. Ayzenshtat, O.B. Koretskaya, O.P. Tolbanov, L.S. Okaevich
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 531:121-124
We present first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer.
Autor:
A.P. Vorobiev, L.S. Okaevich, V. A. Novikov, O.B. Koretskaya, A.I. Ayzenshtat, A. V. Tyazhev, A.I. Potapov, D.L. Budnitsky, O.P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 494:120-127
Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-in
Autor:
V. A. Novikov, A.P. Vorobiev, A. V. Tyazhev, A.I. Potapov, O.P. Tolbanov, G.I. Ayzenshtat, O.B. Koretskaya, L.S. Okaevich, D.L. Budnitsky
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:96-101
Unlike conventional GaAs detector structures, which operation is based on the use of a space charge region of a barrier structure, we propose to form a detector structure of resistor type. In this case, the electric field distribution, ξ ( x ), is n
Autor:
E. P. Drugova, L.P. Porokhovnichenko, O.B. Koretskaya, A.I. Potapov, D.L. Budnitsky, V.P. Germogenov, N.N. Bakin, L.S. Okaevich, A. V. Tyazhev, S.S. Khludkov, A.P. Vorobiev, G.I. Ayzenshtat, Kevin M. Smith, O.P. Tolbanov, M. D. Vilisova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:25-32
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is pr
Autor:
L.S. Okaevich, A.V. Khan, O.B. Koretskaya, A. V. Tyazhev, A.I. Potapov, G.I Aizenshtadt, V.G. Kanaev, S.S. Khludkov, O. P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 448:188-191
The article presents results of investigation of interaction of the structures based on GaAs compensated by interaction of the deep centers with ionizing radiation of a wide spectral range. The structures are able to record single quantum of electrom
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:36-40
Results on the investigation of electrical characteristics of high-resistivity π-ν-n structures based on GaAs compensated with Cr and charge collection dependences on the average electric field and on detector structures parameters are presented.
Publikováno v:
Russian Physics Journal. 41:357-360
We propose a method for determining the behavior of the conductivity of high-resistance photosensitive films separated from the substrate by a space charge region. The method is based on measurement of the potential distribution ϕ(r) over the surfac
Publikováno v:
Russian Physics Journal. 38:859-862
The results of studies of the spectral and lux-ampere characteristics of the photosensitivity of p-n-n structures which are illumined from the side of the p layer are presented. The structures were made by diffusion of iron (or chromium) into n-GaAs.
Autor:
A.I. Potapov, V. A. Novikov, O.B. Koretskaya, L.S. Okaevich, O.P. Tolbanov, D.L. Budnitsky, A.I. Ayzenshtat, A. V. Tyazhev, A.P. Vorobiev
Publikováno v:
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002..
Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulat
Autor:
S.S. Khludkov, A.V. Smol, A.I. Potapov, A.I. Gordienko, V.A. Sergeev, O.B. Koretskaya, A.V. Chuntonov, Yu.P. Tsyupa, V.B. Chmill, A. P. Vorobiev, O. P. Tolbanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 326:310-312
This article describes the results of a systematical search for GaAs structures to be used in a solid-state detector that can be employed in a high flux of high energy particles and low energy neutrons. Three types of GaAs structures were found that