Zobrazeno 1 - 10
of 2 065
pro vyhledávání: '"O. de Abril"'
Publikováno v:
El Trimestre Económico, 1971 Jul 01. 38151(3), 879-887.
Externí odkaz:
https://www.jstor.org/stable/20856233
Publikováno v:
El Trimestre Económico, 1971 Jul 01. 38151(3), 888-891.
Externí odkaz:
https://www.jstor.org/stable/20856234
Autor:
Signor, Regis1 regis.rs@pf.gov.br, Fernandes Marchiori, Fernanda2 fernanda.marchiori@ufsc.br, Bacellar Raupp, Alexandre1 raupp.abr@pf.gov.br, Rubin Magro, Rafael3 magro.rrm@pf.gov.br, de Oliveira Lopes, Alan3 alan.aol@pf.gov.br
Publikováno v:
RAP: Revista Brasileira de Administração Pública. jan/feb2022, Vol. 56 Issue 1, p176-190. 15p.
Autor:
Franco JUNIOR, Arnaldo1 arnaldo.franco-junior@unesp.br
Publikováno v:
Itinerários - Revista de Literatura. 2020, Issue 50, p15-35. 21p.
Publikováno v:
Thin Solid Films. 520:4144-4149
0.5 μm-thick aluminum-doped zinc oxide (ZnO:Al) films were deposited at 100 °C on polyethylene terephthalate substrates by Radio Frequency magnetron sputtering. The as-deposited films were compact and dense, showing grain sizes of 32.0 ± 6.4 nm an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5999ff6329c9a009b9ea39ca1eaf54b3
https://doi.org/10.1016/j.tsf.2011.04.207
https://doi.org/10.1016/j.tsf.2011.04.207
Publikováno v:
physica status solidi c. 9:1065-1069
Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc2e6b34a45df0a235130845f659afe
https://doi.org/10.1002/pssc.201100146
https://doi.org/10.1002/pssc.201100146
Publikováno v:
Solar Energy Materials and Solar Cells. 95:2281-2286
ZnO:Al films deposited at 250 °C on Corning glass by radio frequency magnetron sputtering were studied for their use as front contact for thin film silicon solar cells. For this purpose, a two-step etching method combining different concentrations o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c1f389c6ae5a2b785d773e31530087
https://doi.org/10.1016/j.solmat.2011.03.042
https://doi.org/10.1016/j.solmat.2011.03.042
Publikováno v:
physica status solidi (a). 207:1717-1721
InN/ZnO:Al heterostructures deposited at low temperature on Different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc59489929ed4acaa208050aa49700d3
https://doi.org/10.1002/pssa.200983725
https://doi.org/10.1002/pssa.200983725
Autor:
Barbosa Agata, Priscila1 agatapriscila0812@gmail.com, Pereira de Assis, Izabel1 izabel.assis00@gmail.com, Alves Garcia, Luan Augusto2 luangarciatpc@yahoo.com.br
Publikováno v:
GeSec: Revista de Gestao e Secretariado. 2024, Vol. 15 Issue 10, p1-21. 21p.
Autor:
Li, Chonghui1,2 (AUTHOR), Madsen, Frederikke Bahrt1 (AUTHOR), Liu, Lifei2 (AUTHOR), Yu, Liyun1 (AUTHOR), Zhao, Weizhen2 (AUTHOR), Skov, Anne Ladegaard1 (AUTHOR) al@kt.dtu.dk
Publikováno v:
Macromolecular Materials & Engineering. Sep2024, Vol. 309 Issue 9, p1-11. 11p.