Zobrazeno 1 - 3
of 3
pro vyhledávání: '"O. Yu. Kudryashov"'
Autor:
P. P. Maltsev, A. S. Skripnichenko, E. N. Kulikov, I. A. Leontiev, M. P. Duknovskiy, S. V. Redkin, S. V. Shcherbakov, O. Yu. Kudryashov, N. V. Poboikina, A. K. Smirnova, Yu. Yu. Fedorov, I. A. Glinskiy
Publikováno v:
Nanotechnologies in Russia. 11:480-490
A basic technique for manufacturing and processing polycrystalline diamond as a promising material for heatsinks of high-power microwave semiconductor devices is proposed. The fabrication of polycrystalline diamond wafers by chemical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62848abc30e6ad5a1262054768420ed0
https://doi.org/10.1134/s199507801604011x
https://doi.org/10.1134/s199507801604011x
Autor:
O. Yu. Kudryashov, V. I. Ratushnyi, Alexander Y. Polyakov, A. I. Belogorokhov, M. P. Duhnovsky, Stephen J. Pearton, V. F. Pavlov, T. G. Yugova, S. S. Malakhov, A. K. Ratnikova, Yu. P. Kozlova, A. V. Govorkov, N. B. Smirnov, I. A. Belogorokhov, A. A. Donskov, M. V. Mezhennyi, Yu. Yu. Fyodorov, A. V. Markov, I. A. Leontyev
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1011-1015
Growth of GaN on polycrystalline chemical vapor deposition (CVD) diamond prepared on Si was achieved by hydride vapor phase epitaxy (HVPE). If the polycrystalline CVD diamond is separated from the Si substrate and the side turned to Si is covered by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c592424a7f418b6ac1444e5eea2466c
https://doi.org/10.1116/1.3488616
https://doi.org/10.1116/1.3488616
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