Zobrazeno 1 - 10
of 22
pro vyhledávání: '"O. Yu. Bonchyk"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 215-218 (2020)
Experimental studies of the features of the formation of laser-induced periodic nanostructures on the surface of silicon wafers in the zones of action of second, millisecond and nanosecond laser pulses are conducted in the work. The results of micros
Externí odkaz:
https://doaj.org/article/f00a9f76b6f44f188673991d6da0bb41
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 3, Pp 309-312 (2018)
The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientat
Externí odkaz:
https://doaj.org/article/6c93534635324028b46a7a27472c893d
Autor:
A. V. Voitsekhovskii, H. V. Savytskyy, D. V. Marin, I. I. Izhnin, O. I. Fitsych, M. V. Yakushev, V. S. Varavin, Jerzy Morgiel, A. G. Korotaev, K. D. Mynbaev, O. Yu. Bonchyk, Z. Swiatek
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fluence in n and p-type Hg0.78Cd0.22Te films grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22174c5da87267785349a0b3f300e297
https://doi.org/10.1007/s13204-021-01704-y
https://doi.org/10.1007/s13204-021-01704-y
Autor:
A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc012d947cedb20e0389749c9091a105
https://doi.org/10.1007/s11182-020-02034-2
https://doi.org/10.1007/s11182-020-02034-2
Autor:
M. V. Yakushev, Z. Swiatek, O. Yu. Bonchyk, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, A. V. Voitsekhovskii, N. N. Mikhailov, Jerzy Morgiel, Ihor I. Syvorotka, D. V. Marin, Rafal Jakiela, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions with 190 keV and 350 keV energy and 1014 cm–2 fluence in molecular-beam epitaxy-grown Hg0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f42d8b6ff1277c4617cccad3c0931d4
https://doi.org/10.1007/s13204-020-01327-9
https://doi.org/10.1007/s13204-020-01327-9
Autor:
N. N. Mikhailov, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, O. Yu. Bonchyk, M. V. Yakushev, A. V. Voitsekhovskii, S. A. Dvoretsky, V. S. Varavin, Y. Morgiel, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular beam epitaxy on GaAs substrates with ZnTe and CdT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a20b6f6a8302510856e81d5a5cdcae3
http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000656168
http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000656168
Autor:
O. I. Fitsych, Stanislav M. Dzyadukh, Jerzy Morgiel, I. I. Izhnin, M. V. Yakushev, H. V. Savytskyy, A. V. Voitsekhovskii, A. G. Korotaev, V. S. Varavin, Sergey N. Nesmelov, K. D. Mynbaev, S. A. Dvoretsky, N. N. Mikhailov, Z. Swiatek, O. Yu. Bonchyk
Publikováno v:
Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f142793fac8c3c95947cc6be4fd4b8a0
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794657
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794657
Autor:
D. V. Marin, H. V. Savytskyy, A. V. Voitsekhovskii, Z. Swiatek, S. A. Dvoretsky, O. Yu. Bonchyk, Y. Morgiel, M. V. Yakushev, I. I. Izhnin, O. I. Fitsych, V. S. Varavin, A. G. Korotaev, K. D. Mynbaev
Publikováno v:
Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface layers. In addition to typical highly defective lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c19d1d6d6cffe8bf0f21d5829436fd1f
https://doi.org/10.1007/s13204-018-0679-y
https://doi.org/10.1007/s13204-018-0679-y
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 3, Pp 309-312 (2018)
The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d502468d755e14bbcb67d7ac41ff1b70
https://doi.org/10.15330/pcss.18.3.309-312
https://doi.org/10.15330/pcss.18.3.309-312
Autor:
I. I. Izhnin, H. V. Savytskyy, A. G. Korotaev, O. Yu. Bonchyk, K. D. Mynbaev, O. I. Fitsych, A.V. Voitsekhovsky, Ihor I. Syvorotka, N. N. Mikhailov, Z. Swiatek, S. A. Dvoretsky, M. V. Yakushev, V. S. Varavin, V. G. Remesnik, Jerzy Morgiel
Publikováno v:
Infrared physics and technology. 2019. Vol. 98. P. 230-235
The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced in a HgCdTe film by implantation of arsenic ions. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::168171e5e0d0a62c1fbe4025b1753289
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673792
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673792