Zobrazeno 1 - 10
of 30
pro vyhledávání: '"O. Vladimirsky"'
Autor:
J. Cuomo, D. Guarnieri, Y. Vladimirsky, O. Vladimirsky, Inna V. Babich, S. W. Whitehair, Juan R. Maldonado, R. Fuentes
Publikováno v:
Microelectronic Engineering. 13:347-350
Experimental results are presented on the light scattering properties of x-ray mask substrates relevant to x-ray lithography systems utilizing optical alignment between mask and wafer. The results are compared with a simple light scattering model sim
Autor:
Franco Cerrina, M. Hansen, Juan R. Maldonado, G. M. Wells, O. Vladimirsky, Y. Vladimirsky, R. Nachman
Publikováno v:
Microelectronic Engineering. 11:287-293
The actual temperature rise and time-rise constant of the mask membranes during x-ray irradiation was measured using metal resistors fabricated directly on the mask. The experimental results are compared with the calculated. A model of thermoelastic
Autor:
Barry P. Lai, M. Brown, Francesco Cerrina, Q. Leonard, W. Yun, Zheng Chen, F. Moore, O. Vladimirsky, Efim Gluskin, Y. Vladimirsky
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2522
The advent of high-brightness x-ray sources in the 10–40 keV region opens new possibilities of experiments with microbeams. Techniques to form these focused beams may be based on glancing mirrors, phase elements, or diffractive optics, in particula
Publikováno v:
Review of Scientific Instruments. 67:3378-3378
The x‐ray lithography and micromachining facility at CAMD is described. It consists of four dedicated beamlines and exposure stations using the synchrotron radiation delivered by the CAMD storage ring and 230 m2 of fully equipped clean room. The sc
Autor:
D. Guarnieri, R. Fuentes, Juan R. Maldonado, Y. Vladimirsky, S. W. Whitehair, O. Vladimirsky, Jerome J. Cuomo, A. Starikov
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1579
The purpose of this paper is to present experimental results on optical properties of x‐ray mask substrates relevant to x‐ray lithographysystems utilizing optical alignment between mask and wafer. Data on mask substrates of several materials incl
Publikováno v:
Microelectronic Engineering. 6:233-240
The dc electrical resistivity of LPCVD boro-hydro-nitride films was measured for various film deposition parameters, and was found to be directly related to the optical transparency as well as the mechanical stress of the x-ray mask membranes prepare
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:2178
This paper presents experimental results on the mechanical properties of x‐ray mask substrates. Relevant mechanical properties were determined using an automatic system which plots membrane deformation versus applied differential pressure. In the s
Autor:
L. K. Wang, H. Voelker, O. Vladimirsky, David E. Seeger, B. Hill, E. Petrillo, J. P. Silverman, C. Wasik, Raul E. Acosta, Robert P. Rippstein, R. Viswanathan, Karen Petrillo, John Michael Warlaumont, K. Kwietniak, D. Katcoff, R. Devenuto, Inna V. Babich, V. DiMilia, L. C. Hsia, S. Brodsky, A. D. Wilson
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1662
High performance fully scaled 0.5 μm complementary metal–oxide semiconductors very large scale integrated (CMOS VLSI) circuits have been fabricated using synchrotron x‐ray lithography technology. X‐ray lithography is employed at all levels to
Autor:
Y. Vladimirsky, R. Nachman, H. Voelker, O. Vladimirsky, R. Fair, Franco Cerrina, Juan R. Maldonado, R. Viswanathan, Raul E. Acosta, M. Hansen, G. M. Wells
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1657
This paper presents theoretical model and experimental results on radiation heating and thermally induced distortions in x‐ray masks. The temperature rise of the mask membranes during x‐ray irradiation was measured using metal resistors fabricate
Autor:
Juan R. Maldonado, Inna V. Babich, A. D. Wilson, Raul E. Acosta, R. Fair, David E. Seeger, F. J. Hohn, John Michael Warlaumont, D. Crockatt, H. Voelker, O. Vladimirsky, R. Viswanathan
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:2196
Several sets of x‐ray masks for a metal–oxide semiconductor (MOS) device program were fabricated using boron‐doped silicon as the membrane and gold as the absorber. The metrology of the mask sets was characterized. Mask‐to‐mask overlay erro