Zobrazeno 1 - 10
of 106
pro vyhledávání: '"O. Vancauwenberghe"'
Publikováno v:
Sensors and Actuators A: Physical. 53:304-308
We are developing a new type of integrated microsensor for the preventive detection of water condensation. The sensor operation is based on a thermal oscillation generated by the Peltier effect at a junction. When water droplets form upon cooling of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76092a426cdae7fcd2a81c100fccaedb
https://doi.org/10.1016/0924-4247(96)01172-7
https://doi.org/10.1016/0924-4247(96)01172-7
Publikováno v:
Sensors and Actuators B: Chemical. 27:303-307
A new sensor concept for the preventive detection of water condensation is presented. Based on the Peltier effect, this sensor should be able to detect, on any surface, the condensation probability measured as the small difference between surface tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1b732bb76a39fe467e5947c403ce53
https://doi.org/10.1016/0925-4005(94)01606-i
https://doi.org/10.1016/0925-4005(94)01606-i
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1631-1636
The microstructure and stoichiometry of nitrides formed by direct low‐energy ion beam nitridation has been investigated as a function of ion energy and substrate temperature for Si(100) and SiGe/Si(100) films. Cross‐sectional transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9360a7693beaafc9c6ad83594fb67f14
https://doi.org/10.1116/1.577761
https://doi.org/10.1116/1.577761
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:713-718
Ion beam oxidation (IBO) is a low temperature growth technique where a directional low energy (≤1 keV) ion beam introduces the oxygen into the substrate and athermally activates the chemical reaction leading to the oxide growth. In this work, IBO o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527eb538db9c19150859efccb75f97de
https://doi.org/10.1116/1.577715
https://doi.org/10.1116/1.577715
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 67:301-307
The growth of thin nitride films of Si, MBE-grown Ge and Si x Ge 1− x alloys on Si by low energy ion beam nitridation (IBN)_has been investigated both theoretically and experimentally. This paper focuses on the modeling of the kinetics of IBN thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89b0c11495b9ebc2c36540521a2ac232
https://doi.org/10.1016/0168-583x(92)95821-8
https://doi.org/10.1016/0168-583x(92)95821-8
Publikováno v:
Materials Science and Engineering: B. 12:97-101
Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si1−xGex grown by molecular beam epitaxy on Si(100) was investigated at room temperature using 18O2+ ion beams with energies E ion ranging from 100 eV to 1 keV. The dependence of phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4c00c494aba7cdc36d73d7822e9206
https://doi.org/10.1016/0921-5107(92)90266-c
https://doi.org/10.1016/0921-5107(92)90266-c
Autor:
J. L. Olson, W. J. Croft, O. Vancauwenberghe, Robert J. Culbertson, Nicole Herbots, O. C. Hellman
Publikováno v:
Materials Science and Engineering: B. 12:53-59
Thin films of silicon nitride, germanium nitride and silicon germanium nitride were formed using direct low energy ion beam nitridation. In this process a monoenergetic nitrogen ion beam directly impinges on the material to be nitrided, in the presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925918242813bcebaf81d7c36d46d266
https://doi.org/10.1016/0921-5107(92)90258-b
https://doi.org/10.1016/0921-5107(92)90258-b
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :326-331
Low-energy (< 1 keV) ions are used in a variety of thin-film techniques. When low-energy ions are used during growth, the atomic mobility is athermally enhanced. This can lead to a significant lowering of the temperature necessary to induce epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f570e1f9242aa1cd1fb43e7c51bdc52
https://doi.org/10.1016/0168-583x(91)95233-4
https://doi.org/10.1016/0168-583x(91)95233-4
Publikováno v:
Applied Physics Letters. 59:2031-2033
New dielectric materials based on SiGe have been formed at room temperature by direct ion beam oxidation and nitridation. Si0.8Ge0.2 layers were deposited by molecular beam epitaxy on Si(100) and then exposed to a low‐energy ion beam of 18O+2 to fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4db726ffdc848be48e651212523164b
https://doi.org/10.1063/1.106122
https://doi.org/10.1063/1.106122
Publikováno v:
MRS Proceedings. 223
Direct Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6c1df9aed3bb9a4d9f057d9fcd4a4d7
https://doi.org/10.1557/proc-223-235
https://doi.org/10.1557/proc-223-235