Zobrazeno 1 - 10
of 18
pro vyhledávání: '"O. V. Zhilova"'
Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers
Autor:
O. V. Zhilova, L. I. Yanchenko, Mikhail N. Volochaev, Yu. E. Kalinin, I. V. Babkina, A. V. Sitnikov, M. V. Chehonadskih, M. A. Kashirin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 84:1100-1103
An investigation is performed of the thermal stability and phase transformations of thin-film heterogeneous [(Co40Fe40B20)34(SiO2)66/ZnO/In2O3]85 multilayers obtained via ion beam sputtering. The system contains 85 layers, each consisting of a (Co40F
Autor:
I. V. Babkina, A. V. Sitnikov, V. A. Makagonov, Yu. E. Kalinin, O. V. Zhilova, M. N. Volochaev, S. Yu. Pankov
Publikováno v:
Inorganic Materials. 56:374-381
We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer grow
Publikováno v:
THE VIII INTERNATIONAL YOUNG RESEARCHERS’ CONFERENCE – PHYSICS, TECHNOLOGY, INNOVATIONS (PTI-2021).
Autor:
S. Yu. Pankov, I. V. Babkina, M. N. Kopytin, A. V. Sitnikov, O. V. Zhilova, Yu. E. Kalinin, M. A. Kashirin, V. A. Makagonov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 84:1104-1106
Multilayer films (In2O3/SnO2)69 are obtained via ion-beam sputtering. The effect vacuum heat treatment in the range of room temperature to 600°C has on the structure and electrical properties is studied. It is found that the structures obtained with
Autor:
A.P. Chetverikova, M. A. Kashirin, Yu. E. Kalinin, V.A. Foshin, S. Yu. Pankov, O. V. Zhilova, V. A. Makagonov
Publikováno v:
Advanced Materials & Technologies. :043-048
Autor:
V. A. Makagonov, Yu. E. Kalinin, I. V. Babkina, M. A. Kashirin, O. V. Zhilova, A. V. Sitnikov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:1116-1121
Multilayered [(Co40Fe40B20)34(SiO2)66/ZnO]112, [(Co40Fe40B20)34(SiO2)66/SnO2]32, and [(Co40Fe40B20)34(SiO2)66/In2O3]92 films with layers 1 nm thick are obtained via the ion-beam sputtering of two targets onto a rotating substrate. Their phase transfo
Autor:
O. V. Zhilova, S. Yu. Pankov, Yu. E. Kalinin, Mikhail N. Volochaev, A. V. Sitnikov, V. A. Makagonov
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:11859-11867
The structure and electrical properties of In2O3 and SnO2 oxide semiconductors and heterostructures based on them has been experimentally investigated. The films were prepared by the method of layer-by-layer deposition using the ion-beam sputtering.
Autor:
A. V. Sitnikov, O. I. Remizova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. V. Zhilova
Publikováno v:
Inorganic Materials. 54:885-891
Thin indium oxide films and In–Y–O films containing 0.7 to 3.6 at % Y have been grown by ionbeam sputtering of an indium target and a composite (indium + weighed amounts of yttrium) target in a mixture of argon and oxygen. The thin indium oxide f
Autor:
V. A. Makagonov, A. V. Sitnikov, I. V. Babkina, O. V. Zhilova, Yu. E. Kalinin, O. I. Remizova
Publikováno v:
Semiconductors. 52:1118-1122
Thin Zr-stabilized SnO2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and ele
Autor:
A. V. Sitnikov, I. V. Babkina, Yu. Ye. Kalinin, V. A. Makagonov, O. V. Zhilova, O. I. Remizova
Publikováno v:
Letters on Materials. 8:196-201