Zobrazeno 1 - 10
of 26
pro vyhledávání: '"O. V. Snitko"'
Publikováno v:
Journal of Applied Spectroscopy. 54:180-183
Publikováno v:
physica status solidi (b). 162:531-538
Un processus d'Auger incluant un electron lie et deux trous libres est le phenomene de recombinaison dominant dans le Te aux basses temperatures (T
Publikováno v:
physica status solidi (b). 157:601-607
The effect of the surface roughness by plasmon-phonon attenuation on the surface mixed polariton (SP) dispersion is theoretically investigated. It is shown that the dispersions curve displacement is a nonmonotonous function of the attenuation in the
Publikováno v:
physica status solidi (a). 87:K175-K180
Publikováno v:
physica status solidi (a). 88:647-654
The nonequilibrium depletion relaxation processes at real, clean, thermally oxidized, and Au and Zn doped n- and p-type Si surfaces are studied. A strong acceleration of the relaxation process with field increase is observed. This is explained by the
Publikováno v:
Infrared Physics. 29:709-717
The properties of guided wave polaritons of E- and H-types are studied both theoretically and experimentally. The ranges of existence, field spatial structure, dispersion dependence, attenuation and absorption factors, of guided wave polaritons in th
Publikováno v:
Physica Status Solidi (b). 87:613-618
The polarization anisotropy in the longitudinal surface barrier electroreflectance (ER) of heavily doped Si (110) single crystal is measured as a function of the bias for the 3.4 eV peak (E′0). The ER anisotropy under depletion and weak accumulatio
Publikováno v:
Journal of Applied Spectroscopy. 51:1295-1298
Publikováno v:
physica status solidi (b). 146:517-524
Publikováno v:
physica status solidi (b). 103:589-594
Plasma electroreflectance spectra (1.2 to 2.2 eV) and the bias dependence of capacitance are presented for InN semimetallic (N ≈ 3 × 1020 cm−3) thin films. The interference patterns in the electroreflectance spectra are analysed and grouped into