Zobrazeno 1 - 10 of 29 pro vyhledávání: '"O. V. Milchanin"'
2
Synthesis and Study of Cathode Materials Based on Carbon Nanotubes for Lithium-Ion Batteries
Autor: A. V. Shchegolkov, F. F. Komarov, M. S. Lipkin, O. V. Milchanin, I. D. Parfimovich, A. V. Semenkova, A. V. Velichko, K. D. Chebotov, V. A. Nokhaeva
Publikováno v: Inorganic Materials: Applied Research. 12:1281-1287
This work presents a study of the conditions and possibilities for the intercalation of hexafluorophosphate anions into CNT-based electrodes. For this, cathodes based on CNTs synthesized on different catalysts (Co–Mo)/(Al2O3–MgO) and (Fe–Co)/2.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f11cba0ae0fe1acafc34cb2aa73a360e
https://doi.org/10.1134/s2075113321050373
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6
Reprint of 'Structure and optical properties of SiO2 films with ZnSe nanocrystals formed by ion implantation'
Autor: Liudmila Vlasukova, F. F. Komarov, A. K. Togambayeva, M. A. Makhavikou, O. V. Milchanin, Irina N. Parkhomenko, Olga V. Korolik, I. A. Romanov, Jerzy Żuk, Elke Wendler
Publikováno v: Surface and Coatings Technology. 355:328-332
ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn + and Se + ions at 500 °C. After implantation a part of samples was annealed at 1000 °C for 3 min using rapid thermal annealing. Stru
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::931dc18fdc63f5919680b0549490a214
https://doi.org/10.1016/j.surfcoat.2019.06.043
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7
Fluence effect on photo- and electroluminescence of silica layers implanted with Sn+ ions
Autor: A. van Vuuren, F. F. Komarov, M. A. Makhavikou, L. A. Vlasukova, Irina N. Parkhomenko, I. A. Romanov, O. V. Milchanin, Johannes H. Neethling, Elke Wendler
Publikováno v: Materials Letters. 308:131070
High-fluence ion implantation has been applied to create silica-based light-emitting nanocomposite for silicon photonics. Samples of SiO2/Si have been implanted with Sn ions (80 keV, 2.5 × 1016 cm−2, 5 × 1016 cm−2 and 1 × 1017 ion/cm2) and aft
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e2edb7c964d77c266316f29ba566aa1
https://doi.org/10.1016/j.matlet.2021.131070
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8
Blue and red light-emitting non-stoichiometric silicon nitride-based structures
Autor: A. V. Mudryi, L. A. Vlasukova, Hong-Liang Lu, M. A. Makhavikou, V. Zhivulko, Irina N. Parkhomenko, I. A. Romanov, O. V. Milchanin, N. S. Kovalchuk, F. F. Komarov
Publikováno v: Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 54:360-368
The two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layer were fabricated on p -type Si-substrates by chemical vapour deposition. The SiN x layer of different composition ( x = 0.9 and x = 1.4) was obt
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6301223252ccf9928e93b90095d8712
https://doi.org/10.29235/1561-2430-2018-54-3-360-368
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9
Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation
Autor: A. K. Togambayeva, V. Zhivulko, F. F. Komarov, O. V. Milchanin, Olga V. Korolik, A. V. Mudryi, M. A. Makhavikou, Elke Wendler, L. A. Vlasukova, Irina N. Parkhomenko
Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 435:56-60
Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and afterwards annealed at 900 °C were investigated. RS, PL and TEM methods were used to char
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aea9f9e95331cde0cd6610ae61ced9e4
https://doi.org/10.1016/j.nimb.2018.05.010
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10
Photo- and electroluminescence of oxide-nitride-oxide-silicon structures for silicon-based optoelectronics
Autor: M. A. Mohovikov, A. V. Mudryi, L. A. Vlasukova, N. S. Kovalchuk, Irina N. Parkhomenko, I. A. Romanov, F. F. Komarov, O. V. Milchanin
Publikováno v: Doklady of the National Academy of Sciences of Belarus. 62:546-554
Oxide-nitride-oxide-silicon (SiO2/SiN0.9/SiO2/Si) structures have been fabricated by chemical vapor deposition. The elemental composition and light emission properties of “SiO2/SiN0.9/SiO2/Si” structures have been studied using Rutherford backsca
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ca359d9feb285bea7d027f3018f6199
https://doi.org/10.29235/1561-8323-2018-62-5-546-554
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