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pro vyhledávání: '"O. V. Meschurov"'
Autor:
Pavel A. Chubunov, R. G. Useinov, O. V. Meschurov, A. G. Baz, V. M. Uzhegov, Gennady I. Zebrev, P. A. Zimin, Vasily S. Anashin, Elizaveta V. Mrozovskaya
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044927fad8f76a7450f968c55edfb5c4
https://doi.org/10.1109/radecs45761.2018.9328654
https://doi.org/10.1109/radecs45761.2018.9328654
