Zobrazeno 1 - 10
of 35
pro vyhledávání: '"O. V. Kucherova"'
Publikováno v:
Russian Microelectronics. 44:203-209
An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency adm
Autor:
V. N. Cherkasova, O. V. Kucherova, A. V. Ermachihin, V. I. Zubkov, V. G. Litvinov, I. N. Yakovlev
Publikováno v:
Semiconductors. 48:917-923
The effect of the electrostatic interaction of charges in multiple quantum wells of a doped heterostructure is studied by admittance spectroscopy methods and numerical self-consistent calculations. Samples containing three InGaAs/GaAs quantum wells e
Publikováno v:
Inorganic Materials. 50:68-74
This paper examines the mechanism underlying the formation of linear and fractal aggregates of high-conductivity magnetic nanoparticles in a static magnetic field. A transition between dendritic and fractal structures in response to a change in magne
Publikováno v:
Inorganic Materials. 47:1574-1578
On the basis of the designed complex of low-temperature admittance spectroscopy, the electron spectrum of semiconductor light emitting diode (LED) heterostructures with InGaN/GaN multiple quantum wells was investigated. The features of the constructi
Publikováno v:
Semiconductors. 44:335-340
For the first time, using a complex of admittance spectroscopy, light-emitting heterostructures with InGaN/GaN multiple quantum wells were studied in a wide temperature range of 6–300 K. Three peaks are found in the conductance spectra; these peaks
Autor:
S. A. Bogdanov, A. L. Vikharev, A. V. Afanas'ev, James E. Butler, V. I. Zubkov, O. V. Kucherova, V. A. Ilyin, A. V. Zubkova
Publikováno v:
Journal of Applied Physics. 118:145703
Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detect
Autor:
Yakovlev, G. E.1 geyakovlev@etu.ru, Dorokhin, M. V.2, Zubkov, V. I.1, Dudin, A. L.3, Zdoroveyshchev, A. V.2, Malysheva, E. I.2, Danilov, Yu. A.2, Zvonkov, B. N.2, Kudrin, A. V.2
Publikováno v:
Semiconductors. Aug2018, Vol. 52 Issue 8, p1004-1011. 8p.
Autor:
Zeng, Yiyu, Huang, Jialiang, Li, Jianjun, Sun, Kaiwen, Shah, Usman Ali, Deng, Hui, Zhang, Xueyun, Sha, Chuhan, Qian, Chen, Song, Haisheng, Hao, Xiaojing
Publikováno v:
Solar RRL; Oct2022, Vol. 6 Issue 10, p1-12, 12p
Publikováno v:
Technical Physics Letters. Dec2018, Vol. 44 Issue 12, p1171-1173. 3p.
Publikováno v:
Applied Physics Letters; 8/14/2021, Vol. 119 Issue 4, p1-6, 6p