Zobrazeno 1 - 10
of 13
pro vyhledávání: '"O. V. Kovalenkov"'
Autor:
D. A. Livshits, O. V. Kovalenkov, V. A. Kapitonov, D. A. Vinokurov, Zh. I. Alferov, Z. N. Sokolova, I. S. Tarasov
Publikováno v:
Semiconductors. 33:788-791
Arrays of strained nanoscale InP islands in an In0.49Ga0.51P host on a GaAs(100) substrate and InAs islands in a In0.53Ga0.47As host on an InP(100) substrate are obtained by metalorganic vapor-phase epitaxy (MOVPE). Their structural and photoluminesc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6d254acf27926a6e69968a4370e4a9
https://doi.org/10.1134/1.1187782
https://doi.org/10.1134/1.1187782
Autor:
O. V. Kovalenkov, Boris P Zakharchenya, P. E. Pak, D. A. Vinokurov, R. I. Dzhioev, I. S. Tarasov, V. L. Korenev
Publikováno v:
Physics of the Solid State. 40:1587-1593
Spin splitting of optically active and inactive excitons in nanosized n-InP/InGaP islands has been revealed. Optically inactive states become manifest in polarized-luminescence spectra as a result of excitons being bound to neutral donors (or of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f510f2a902cf8106c2f0cc8a79808827
https://doi.org/10.1134/1.1130606
https://doi.org/10.1134/1.1130606
Autor:
H. J. Kreide, M. Petri, P. Drescher, J. Langbeine, K. H. Kaiser, H. Trautner, H. G. Andresen, M. Schemies, M. Steigerwald, Yu. A. Mamaev, D. A. Vinokurov, M. S. Galaktionov, P. Jennewein, H. J. Schöpe, S. Köbis, D. v. Harrach, O. V. Kovalenkov, B. S. Yavich, S. Plützer, H. Fischerz, Ch. Nachtigall, K.-H. Steffens, E. Reicherte, A. V. Subashiev, Yuri P. Yashin, P. Hartmann, J. Bermuth, Kurt Aulenbacher, H. Euteneuer, J. Hoffmann, Th. Dombol, N. N. Faleev
Publikováno v:
Applied Physics A Materials Science & Processing. 63:203-206
Strained layer GaAs.95P.05 photo cathodes are presented, which emit electron beams spinpolarized to a degree of P = 75% typically. Quantum yields around QE = 0.4% are observed routinely. The figure of merit P2 × QE = 2.3 × 10−3 is comparable to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a2e93fe42184c68b6f93e1691707d77
https://doi.org/10.1007/bf01567651
https://doi.org/10.1007/bf01567651
Autor:
H. Trautner, M. Steigerwald, P. Hartmann, Yu. A. Mamaev, K. Aulenbacher, S. Köbis, O. V. Kovalenkov, H. G. Andresen, Th. Dombol, K.-H. Steffens, H. Fischerz, J. Langbeine, D. A. Vinokurov, D. v. Harrach, E. Reicherte, H. J. Kreide, M. Petri, Yuri P. Yashin, P. Drescher, A. V. Subashiev, B. S. Yavich, N. N. Faleev, J. Hoffmann, M. S. Galaktionov, H. J. Schöpe, M. Schemies, K. H. Kaiser, S. Plützer, P. Jennewein, J. Bermuth, H. Euteneuer, Ch. Nachtigall
Publikováno v:
Applied Physics A: Materials Science & Processing. 63:203-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fcf7f263002a3b18b6a1e5728e90927
https://doi.org/10.1007/s003390050373
https://doi.org/10.1007/s003390050373
Publikováno v:
Technical Physics Letters. 24:623-625
Results are presented of investigations of the growth of self-organizing nanosize InP and InAsP clusters in an In0.5Ga0.5P matrix. The structure was characterized by low-temperature photoluminescence and transmission electron microscopy. The photolum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5296320698754569fb0d2c0ee98dab
https://doi.org/10.1134/1.1262221
https://doi.org/10.1134/1.1262221
Autor:
A. S. Vlasov, Serge Oktyabrsky, D. A. Vinokurov, K. Sun, Vadim Tokranov, Chaodi Li, O. V. Kovalenkov, Alexander Mintairov, James L. Merz
Publikováno v:
Physical Review B. 69
Low-temperature near-field scanning optical microscopy was used to study the dependence of the emission spectra of single self-organized InAs on GaAs, InAs on AlAs and InP on GaInP quantum dots (QDs) on contact pressure exerted by a near-field optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a6b2c552e4b542869c37d2c5457267
https://doi.org/10.1103/physrevb.69.155306
https://doi.org/10.1103/physrevb.69.155306
Autor:
A. V. Subashiev, O. V. Kovalenkov, S. Plützer, Y. Mamaev, Yuri P. Yashin, D. A. Vinokurov, P. Drescher, M. S. Galaktionov, E. Reichert, M. Schemies, B. S. Yavich
Publikováno v:
9th International Vacuum Microelectronics Conference.
When a lattice-mismatched layer is grown on a substrate, the misfit between the layers at the interface is accommodated in the epitaxial layer and lifts the orbital degeneracy of the levels at the valence band maximum. Hence, the polarization of opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad790fb6e5f5564830c5627db852cb91
https://doi.org/10.1109/ivmc.1996.601918
https://doi.org/10.1109/ivmc.1996.601918
Autor:
Alexander Mintairov, D. A. Vinokurov, K. Sun, Vadim Tokranov, A. S. Vlasov, Serge Oktyabrsky, P. A. Blagnov, James L. Merz, O. V. Kovalenkov, Chaodi Li
Publikováno v:
Scopus-Elsevier
Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. “Pressure” coefficients o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8743bf0068c24d8943ac472b73827ca2
https://doi.org/10.1557/proc-737-e7.4
https://doi.org/10.1557/proc-737-e7.4
Autor:
D. A. Vinokurov, J. P. Reynolds, A. S. Vlasov, Alexander Mintairov, O. V. Kovalenkov, James L. Merz
Publikováno v:
MRS Proceedings. 618
We present low-temperature near-field scanning optical microscopy (NSOM) measurements of self-organized InP quantum dots (QD) embedded in a GaInP layer. We observed an anomalously strong increase in the emission energy (∼270 meV) of a single QD by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::770b9e08bd21e43652618b47ead68ad1
https://doi.org/10.1557/proc-618-207
https://doi.org/10.1557/proc-618-207
Autor:
Alexander Usikov, O. V. Kovalenkov, Meredith Reed, Michael Wraback, Vladimir Dmitriev, E. D. Readinger, Hongen Shen, Alexander Syrkin
Publikováno v:
Applied Physics Letters. 93:133505
The effects of negative polarization charge at the n-InGaN∕p-GaN interface on the performance of hydride vapor phase-epitaxy deposited single heterostructure n-InGaN∕p-GaN LEDs with p-side down are investigated. The strong peak emission wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e88d413eaf479b162459d0755c4f10d
https://doi.org/10.1063/1.2992582
https://doi.org/10.1063/1.2992582