Zobrazeno 1 - 8
of 8
pro vyhledávání: '"O. V. Iaseniuc"'
Publikováno v:
Optics and Spectroscopy. 121:140-142
We investigate the kinetics of photodarkening and recording of holographic diffraction gratings in amorphous As4S3Se3 thin-film structures doped with tin (Sn) in concentrations of 0–10 at %. It is established that an increase in the Sn concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3c448eeb36c7f688b0d3f171ea6baf
https://doi.org/10.1134/s0030400x16070237
https://doi.org/10.1134/s0030400x16070237
Autor:
M. S. Iovu, O. V. Iaseniuc
Publikováno v:
SPIE Proceedings.
Arsenic selenide glasses are well known as high photosensitive materials with a wide range of application in optoelectronics and information storage systems. Besides, it was found that the impurities influence the electrical and photoelectrical chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461b57604f17409fefb13250018f7299
https://doi.org/10.1117/12.2242880
https://doi.org/10.1117/12.2242880
Publikováno v:
SPIE Proceedings.
Excellent optical properties of chalcogenide glasses make them interesting for optoelectronic devices in the visible (VIS) and, especially, in the near- and mid-infrared (NIR and MIR) spectral regions. The rare-earth (RE3+) doped Ga17Ge25As8.3S65 gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9643d2d4de49df176c3b96b927dba24
https://doi.org/10.1117/12.2243163
https://doi.org/10.1117/12.2243163
Publikováno v:
Nanomaterials for Security ISBN: 9789401775915
Experimental results on some physical and optical properties of (As2Se\(_{3})_{1-x}\):Sn x and (As4S3Se\(_{3})_{1-x}\):Sn x (x = 0 ÷ 10 at %) glasses and amorphous films (\(d \sim 2.0\,\upmu\) m) are presented. The bulk chalcogenide glasses are stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::274e1daadc2be68af9dc4830a9c260ef
https://doi.org/10.1007/978-94-017-7593-9_10
https://doi.org/10.1007/978-94-017-7593-9_10
Publikováno v:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII.
Experimental results on some physical and optical properties of (As2Se3)1-x:Snx and (As4S3Se3)1-x:Snx (x = 0–10 at.%) glasses and amorphous films (d∼2.0 μm) are presented. The bulk chalcogenide glasses are studied by X-ray diffraction spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d8067468470e46759fb5ee5a472ba1
https://doi.org/10.1117/12.2069894
https://doi.org/10.1117/12.2069894
Publikováno v:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII.
Amorphous arsenic trisulfide (As 2 S 3 ) and arsenic triselenide (As 2 Se 3 ) are among widely investigated amorphous materials due to its interesting electrical, optical and photoelectrical properties. In order to improve the physical properties and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2895472fdcc36343f272f06516ef5043
https://doi.org/10.1117/12.2065542
https://doi.org/10.1117/12.2065542
Autor:
O. V. Iaseniuc
Publikováno v:
SPIE Proceedings.
The modifications of optical parameters (optical band gap E g , absorption coefficient α, refractive index n) under light irradiation by He-Ne laser of the amorphous thin films with different amount of Sn were measured and calculated. In the present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0f3128ed6f2881158b700e9bb2d05ac
https://doi.org/10.1117/12.954163
https://doi.org/10.1117/12.954163
Autor:
D. F. Shepel, I. A. Cojocaru, E. P. Colomeico, D. V. Harea, A. Meshalkin, O. V. Iaseniuc, E. E. Harea, M. S. Iovu
Publikováno v:
SPIE Proceedings.
The transmission spectra of bulk and thin films of (As2S1.5Se1.5)1-x:Snx in the visible and near infrared (IR) regions were investigated. Doping of As2S1.5Se1.5 chalcogenide glass with tin impurities essentially reduce the absorption bands of SH (Se-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c0026275f47b6bd5f7d04e226e74e6
https://doi.org/10.1117/12.956493
https://doi.org/10.1117/12.956493