Zobrazeno 1 - 10
of 337
pro vyhledávání: '"O. V. Bogdankevich"'
Publikováno v:
Current Science, 1967 Sep 01. 36(17), 473-474.
Externí odkaz:
https://www.jstor.org/stable/24062880
Publikováno v:
Quantum Electronics. 28:370-373
An experimental comparison was made of the focusing of coherent quasi-Gaussian radiation beams from laser electron-beam tubes (quantoscopes) with the results of model calculations based on the Fresnel-Kirchhoff transformation of the complex amplitude
Autor:
O V Bogdankevich
Publikováno v:
Quantum Electronics. 26:157-162
An analysis is made of the conditions of focusing of non-Gaussian beams by an ideal thin lens which transfers light from a laser projection tube (quantoscope) to a large screen. It is shown that, under certain conditions, the resolving power of an im
Autor:
O V Bogdankevich
Publikováno v:
Quantum Electronics. 24:1031-1053
The operating principles, threshold characteristics, and physical factors imposing restrictions on the main operational parameters are reviewed for semiconductor lasers pumped by beams of accelerated electrons. The attention is focused on electrodyna
Publikováno v:
Soviet Journal of Quantum Electronics. 20:809-810
A model of a homogeneously broadened emission line of an electron-beam-pumped semiconductor laser is modified to deal with the case when the population of the radiative level is close to the equilibrium value. This is done in such a way that all the
Publikováno v:
Soviet Journal of Quantum Electronics. 13:1453-1459
The Monte Carlo method is used to calculate the spatial distribution of the density of the absorbed energy and the dimensions of the excited region in GaAs and CdS semiconductor lasers excited by beams of electrons of energies from 10 keV to 20 MeV.
Autor:
A.A. Rukhadze, S G Arutyunyan, A. A. Ovchinnikov, S I Zavorotnyĭ, Yu.F. Bondar, A.L. Ipatov, O. V. Bogdankevich, G. P. Mkheidze
Publikováno v:
Soviet Journal of Quantum Electronics. 12:122-129
An experimental investigation was made of the interaction between a pulsed high-current relativistic electron beam (having an energy of ~ 1 MeV, a current of ~ 10 kA, and a pulse duration of ~ 60 nsec) with neutral gases in the pressure range 1–750
Publikováno v:
Soviet Journal of Quantum Electronics. 19:1141-1144
A semiclassical approximation is used in a calculation of the distributions of the fields and excitation thresholds of transverse modes generated in semiconductor lasers pumped longitudinally by an electron beam. Calculation allows for the effects as
Publikováno v:
Soviet Journal of Quantum Electronics. 5:953-956
Two-dimensionsal radiative transfer equations and population inversion rate equations are used to calculate various parameters of an electron-beam-pumped laser. Dependences of the threshold current density and output power on the transverse dimension
Autor:
O V Bogdankevich
Publikováno v:
Soviet Journal of Quantum Electronics. 3:455-463
The construction of electron-beam-excited semiconductor lasers, their present characteristics, and electron-optics requirements are discussed. The characteristics of laboratory prototypes and of sealed commercially produced laser tubes are given. Pot