Výsledky vyhledávání - "O. Tottereau"

Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Autor: Marc Portail, Eric Frayssinet, M. Nemoz, O. Tottereau, Rémi Comyn, Yvon Cordier

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 507, pp.220-225. ⟨10.1016/j.jcrysgro.2018.11.029⟩

The present work is dedicated to the study of peculiar defects observed in GaN/AlN structures grown on Silicon substrate using the plasma assisted Molecular Beam Epitaxy under metal-rich conditions. Optical microscopy shows that these defects have un

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f5027f3db2be55a83c121de8608a75c
https://doi.org/10.1016/j.jcrysgro.2018.11.029

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Impact-induced chemical fractionation as inferred from hypervelocity impact experiments with silicate projectiles and metallic targets

Autor: Akiko M. Nakamura, Suzanne Jacomet, O. Tottereau, Guy Libourel, Patrick Michel, Clément Ganino

Publikováno v: Meteoritics and Planetary Science
Meteoritics and Planetary Science, Wiley, 2018, 53 (11), pp.2306-2326. ⟨10.1111/maps.13131⟩

International audience; Hypervelocity impacts are common in the solar system, in particular during its early phases when primitive bodies of contrasted composition collided. Whether these objects are chemically modified during the impact process, and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fba92e6e352a6c3be8aab18f57ff41c
https://doi.org/10.1111/maps.13131

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Ion-induced interdiffusion of surface GaN quantum dots

Autor: Andreas D. Wieck, O. Tottereau, Arne Ludwig, Marc Portail, Aimeric Courville, Charlotte Rothfuchs, Fabrice Semond

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 409:107-110

In the flourishing fields of quantum technology gallium nitride (GaN) quantum dots (QDs) have great appeal by providing high stability and room-temperature operation. Here, we report on the ion implantation of surface GaN QDs grown in the hexagonal c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64bce596ffee4f7cc39d37ae6e23c612
https://doi.org/10.1016/j.nimb.2017.04.036

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Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

Autor: A. Bchetnia, J. Laifi, B. El Jani, T. Sekrafi, O. Tottereau, N. Chaaben, C. Saidi

Publikováno v: Journal of Alloys and Compounds. 625:271-276

Undoped GaN and diluted GaNBi alloys were grown on (0 0 0 1) sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 480 °C. By using in-situ laser reflectometry, it is found that the increase of TMBi flow rate leads to a reduction of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f59f45dba2a81bc385e20de662582a03
https://doi.org/10.1016/j.jallcom.2014.11.142

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Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

Autor: Jesús Zúñiga-Pérez, O. Tottereau, Guy Feuillet, Michel Khoury, Philippe Vennéguès

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2017, 122, pp.105108. ⟨10.1063/1.5001914⟩
Journal of Applied Physics, 2017, 122, pp.105108. ⟨10.1063/1.5001914⟩

Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon under typical metal organic chemical vapor deposition growth conditions, is a common problem that often limits the development of GaN on silicon substrates, in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54fc35c9d06485ffe1332dc4ceb6847e
https://hal.archives-ouvertes.fr/hal-02391999

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Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots

Autor: O.A. Niasse, F. Mbaye, O. Tottereau, A. Ndiaye, A. Beye, Bassirou Ba, A. Lo

Publikováno v: Research Journal of Applied Sciences, Engineering and Technology. 5:30-36

This study presents self-assembled quantum dots structures made on GaAs substrate. The samples were grown by Molecular Beam Epitaxy (MBE) in the Stranski-Krastanow (SK) growth mode. Two types of quantum dots structures are performed under different g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a55798de08559d2ae6478b37df361463
https://doi.org/10.19026/rjaset.5.5080

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Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Autor: Jean Massies, Mohamed Al Khalfioui, Julien Brault, Aimeric Courville, Benjamin Damilano, Bernard Gil, Thi Huong Ngo, Philippe Vennéguès, Daniel Rosales, Samuel Matta, Mathieu Leroux, O. Tottereau, M. Korytov

Publikováno v: Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2016, pp.05FG06. ⟨10.7567/JJAP.55.05FG06⟩

Self-assembled Al y Ga1− y N quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al0.5Ga0.5N(0001) oriented layers using sapphire substrates. The QD formation has been followed in situ by reflection high energy elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49236938ceb2fe030c145af89ab24611
https://hal.archives-ouvertes.fr/hal-01382466

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Growth of GaN based structures on focused ion beam patterned templates

Autor: D. Troadec, Fang Yuh Lo, M. Boucherit, Y. Y. Hu, Andreas D. Wieck, Yvon Cordier, L. Nguyen, Mohammed R. Ramdani, Ali Soltani, O. Tottereau, Arne Ludwig

Publikováno v: physica status solidi c. 8:1516-1519

Focused ion beam technique is a powerful tool for defining patterns within a semiconductor film. In this paper, we show that it is possible to realize patterns such as disks and columns within thick GaN templates and that it is compatible with the re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d32f6107223674cc650eb6c901c76ef
https://doi.org/10.1002/pssc.201000882

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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Autor: O. Tottereau, K. Blary, Sébastien Chenot, J. C. Moreno, Yvon Cordier, L. Nguyen, Eric Frayssinet, Brahim Benbakhti, Ali Soltani, Fabrice Semond, Z. Cao

Publikováno v: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩
Materials Science in Semiconductor Processing, Elsevier, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩

International audience; In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::910d050fa85cedc246d32d3b3e05a178
https://doi.org/10.1016/j.mssp.2009.07.003

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AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Autor: Yvon Cordier, Marc Portail, Sébastien Chenot, O. Tottereau, Marcin Zielinski, Thierry Chassagne

Publikováno v: Journal of Crystal Growth. 310:4417-4423

The elaboration of Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) structures is comparatively investigated on cubic SiC/Si(1 1 1) templates and on silicon substrates. As compared with silicon, 3C-SiC/Si(1 1 1) template is less

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12cc3ad8cce91033d3c3be615fa199b8
https://doi.org/10.1016/j.jcrysgro.2008.07.063

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