Zobrazeno 1 - 10
of 43
pro vyhledávání: '"O. Tanner"'
Autor:
B. J. Pollard, J.R. Sneyd, B. A. McGrath, O. Adeyi, Gary Minto, O. Tanner, C. Barben, K. M. Rowan, Monty G. Mythen, S. Wrigley, M. Morgan, T. Szakmany, S. G. Pollard, T. Quraishi, R. Malhotra, P. N. Foster, Graham J. Kemp, S. Benington, D. K. Arvind, Alistair Macfie, Donald H. Burke, J. McDonald, K. Browett, S. C. Radley, F. S. Haddad, Rebecca Cusack, Andrew Bates, S. Wilson, D. Turnbull, M. C. Bellamy, S. Turvill, Hugh McCann, Alasdair W Jubb, G. Calo, B. Telgarsky, T. Wilson, J. Rigg, D. G. Lambert, A. W. Blatcher, N. Saxena, Remo Guerrini, L. Potter, M. F. Bird, Mark Emberton, K. Nishikawa, Judith Elizabeth Hall, A. McDonald, Kevin Murphy, John Kinsella, S. Rahmani, J. E. Hall, H. Zhao, A. Bryan, M. Davey, A. Tridente, G. P. Aithal, R. P. Tully, Simon Mercer, A. Fisher, Michael P. W. Grocott, M. Parker, D. G. Lloyd, V. Rewari, Steve Harris, Janek Mann, A. J. Stone, M. Al-Hashimi, David J. Rowbotham, R. H. Hawes, M. Pirmohamed, Paul Wright, Ahilanandan Dushianthan, W. F. S. Sellers, Simon J. Howell, M. West, P. A. Kyriacou, P. Charters, D. A. Hume, I. K. Moppett, W. A. Bickmore, R.A. Struthers, V. Goss, Antony Robert Wilkes, J. P. Phillips, A. P. Jackson, C. Jepegnanam, I. M. Goodhart, D. Atkinson, K. D. Singh, A. Diukova, Richard G. Wise, J. Andrzejowski, Siobhan Creanor, M. Leuwer, S.K. Pal, J. P. Thompson, A. D. Harris, Sandy Jack, I. Gall, B. Shelley, T. Zaman, A. D. Postle, C. Taylor-Hannan, A. K. Toor, Suneetha Ramani Moonesinghe, J. Wood, Y. Sorour, T. Starkie, B. Batuwitage, C. Johnstone, S. Webber, A. Banerjee, M. Chikhani, J. A. Moore, J. M. Hunter, D. Ma, T. Y. Cui, S. Charters, M. Berthoud, Lisa Loughney, S. Muthukumaraswamy, C. J. D. Pomfrett, A. Belhaj, G. H. Mills, G. B. Drummond, A. Vinogradov, P. Alexander, R.S. Vardanyan, J. Snowden, Helena R. Watts, Z. Milan, M. Drozd, D. Lythgoe, L. Jobling, J. Davidson, Marcela P. Vizcaychipi, M. Eberl, R. M. Langford
Publikováno v:
British Journal of Anaesthesia. 110:860P-885P
Publikováno v:
Thin Solid Films. 321:55-59
Arrays of Ge three-dimensional (3D) islands were grown on a Si(001) substrate by molecular beam epitaxy without any lithographic process. Dislocation-free islands 50 nm in diameter were aligned to the [110] direction of a vicinal Si(001) substrate ti
Publikováno v:
Thin Solid Films. 321:201-205
Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I–V bistability phenomenon was observed in those devices. We used a `band switching' mechanism to explain the bistabilit
Publikováno v:
Journal of Crystal Growth. :1278-1283
Boron and oxygen were implanted into the SiO 2 region of a thin silicon on insulator (SOI) substrate to form borosilicate glass and reduce the reflow temperature needed for compliant substrates. The effect of lowering the reflow temperature was exami
Publikováno v:
Journal of Applied Physics. 81:1695-1699
A thick (260 nm) pseudomorphic metastable n-type Ge0.06Si0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF2+ ions to a dose of 3×1013 cm−2, so that a p−n junction was forme
Publikováno v:
Journal of Crystal Growth. 157:121-125
The quality of annealed Si 0.86 Ge 0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under
Publikováno v:
Journal of Materials Science: Materials in Electronics. 6:311-324
In this paper, we review recent progress in SiGe MOS technology. Progress in high mobility p-channel and n-channel devices will be presented as well as some of the materials and processing issues related to the fabrication of these heterostructures.
Publikováno v:
Journal of The Electrochemical Society. 142:1260-1266
The properties of a highly selective chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H 2 O 2 :CH 3 COOH) is investigated in etching SiGe/Si heterostructures. This solution has been found to etch Si 1-x Ge x much
Autor:
Betty L. Wells, Bonnie O. Tanner
Publikováno v:
Community Development Society. Journal. 25:246-258
To turn America's rural communities from decades of decline to a condition of maintenance in the 1990's and to growth and development in the new century requires local knowledgeable leadership. This leadership must include agricultural and rural wome