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Junctionless sub-micron silicon wire device fabricated by atomic force microscope lithography and electrically characterized for gas sensing application at room temperature

Autor: O. Sidek, M. T. Asmah

Publikováno v: 36th International Electronics Manufacturing Technology Conference.

Fabrication of junctionless sub-micron silicon wire based device using atomic force microscope lithography was presented in this article. The fabricated device consisted of two adjacent probing pads which served as probing pads during electrical char

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87becff2c49685ae919b159dc7bf6219
https://doi.org/10.1109/iemt.2014.7123127

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Digital Front–End for Wideband Analog Front–End in a Multi–Standard Software Defined Radio Receiver

Autor: O. Sidek, M. Puvaneswari

Publikováno v: Jurnal Teknologi.

Perisian tertakrif radio merupakan suatu konsep yang sedang memperoleh momentum bagi merealisasikan terminal radio wayarles berbilang mod, berbilang jalur dan berbilang piawai supaya dapat beroperasi mengikut pelbagai piawai komunikasi mudah alih yan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6969a0f16e7c4393d2ab5c4d7df67336
https://doi.org/10.11113/jt.v40.418

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Half cut stress concentration (HCSC) region design on MEMS piezoresistive cantilever for sensitivity enhancement

Autor: S. M. Firdaus, O. Sidek, Kamarulazizi Ibrahim, Magdy Hussien, Ishak Abd Azid

Publikováno v: 2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT).

This work introduced a half cut stress concentration (HCSC) region on the surface of MEMS piezoresistive cantilever in order to improve the sensitivity of a cantilever sensor based on loading/force effect. From the available information, by increasin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3ef72abc49885d93cf4583549376007
https://doi.org/10.1109/iemt.2008.5507894

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FE modeling of 2-phase permanent magnet motor for high-speed applications

Autor: Dahaman Ishak, O. Sidek, Soib Taib

Publikováno v: 2007 International Conference on Intelligent and Advanced Systems.

This paper describes the FE modeling and analysis for the design of 2.5kW 100 krpm 2-phase permanent magnet brushless motor intended to be used as a high-speed turbine. The electromagnetic characteristics and performance of the motor such as back-emf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::293bc0800fa12b5f8f245cdee1c9d6aa
https://doi.org/10.1109/icias.2007.4658505

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Clamp Placement Optimization in Full-Chip ESD (Electro-Static-Discharge) Design

Autor: Chuah Cheow Theng, O. Sidek

Publikováno v: 2006 Thirty-First IEEE/CPMT International Electronics Manufacturing Technology Symposium.

A simulation approach is presented that allow early visibility, guidance, and analysis of clamp placement in early design stage (power template design) on a chip level complexity. The ESD robustness of product is largely attributed to the degree of c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40aa3cef381b6c89bb5674177112370b
https://doi.org/10.1109/iemt.2006.4456456

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Electrical Characteristics of 100 MeV 28Si implantation in GaAs

Autor: Brij M. Arora, Yousuf Pyar Ali, O. Sidek, A.R. Damle, A.M. Narsale

Publikováno v: 2006 IEEE International Conference on Semiconductor Electronics.

Single crystal n-GaAs substrates have been implanted at room temperature with 100 MeV 28Si ions to a dose of 1times1018 ions/m2. The electrical behaviour of these samples has been investigated after implantation and annealing to 850degC by current vo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50e37f8fddd55e4867d27f6efef67285
https://doi.org/10.1109/smelec.2006.380779

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Layout Dependence Effect on High Speed CMOS Transistor Leakage Current

Autor: P. B. Y. Tan, A.V. Kordesch, O. Sidek

Publikováno v: 2005 Asia-Pacific Conference on Applied Electromagnetics.

We investigated the layout dependence effect that is caused by different active space, Sa, on 130 nm CMOS transistors leakage current, Ioff. This layout dependence phenomenon is known as STI stress effect. The results show that when Sa changes from 5

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1b3691fb3ff9211625c15900e4dc9b75
https://doi.org/10.1109/apace.2005.1607834

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CMOS transistor mismatch model with temperature effect for HSPICE and SPECTRE

Autor: O. Sidek, A.V. Kordesch, P. B. Y. Tan

Publikováno v: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

The purpose of this paper is to present a HSPICE and a SPECTRE models that are able to describe the temperature effect on CMOS transistor pair mismatch by adding a linear temperature dependent equation to the existing model. Here, we model the mismat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::013a0740254a79d4d1f518f03e856628
https://doi.org/10.1109/icsict.2004.1436718

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